The IRFP460APBF is an N-channel 500V 20A power MOSFET with 0.27 Ohm RDS(on) in TO-247 package from Infineon (formerly IR). The device uses a vertical DMOS structure where current flows vertically from drain (bottom of die) through the lightly-doped N-epitaxial drift region to the source (top surface). The N-epitaxial layer determines the voltage rating: at 500V blocking, the drift region is thick and lightly doped, contributing most of the RDS(on). The gate oxide controls the MOS channel: applying VGS above VTH (2-4V) inverts the P-body region, creating a conductive channel between N+ source and N-epitaxial drain. At VGS=10V, the channel is fully enhanced giving 0.27 Ohm. The TO-247 package provides low junction-to-case thermal resistance (0.45C/W) for effective heat-sinking. Internal gate resistance is approximately 3.6 Ohms.