1ED020I12-F2


2A isolated IGBT gate driver, 1200V isolation, >50kV/µs CMTI, DESAT protection, DSO-16

10402

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制造商零件:

1ED020I12-F2

包装:

DSO-16 (300mil, 10.0 x 7.5mm)

品牌:
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说明

产品概览

The 1ED020I12-F2 from Infineon Technologies is a 2A single-channel isolated IGBT gate driver with 1200V isolation voltage. Featuring >50kV/µs CMTI, DESAT short-circuit protection, and UVLO in a DSO-16 package, it is designed for high-reliability motor drive and inverter applications.

主要规格

Output Peak Current 2A (source/sink)
隔离电压 1200V
Supply (Output Side) 15V – 30V
Supply (Input Side) 3.0V – 5.5V
传播延迟 120ns (typ)
CMTI >50kV/µs
UVLO Yes (output side)
DESAT Protection Yes (short-circuit detection)
工作温度 -40°C to +125°C
包装 DSO-16 (300mil)

特点

  • 1200V galvanic isolation for high-voltage IGBT/SiC driving
  • >50kV/µs CMTI for noise immunity in high dv/dt environments
  • Integrated DESAT detection for IGBT short-circuit protection
  • Active Miller clamping prevents parasitic turn-on
  • UVLO on output side prevents insufficient gate drive
  • IN+ and IN- inputs allow inverting or non-inverting configuration

应用

  • Motor drive and inverter IGBT gate drive
  • Solar inverter and UPS power conversion
  • Welding equipment and induction heating
  • Industrial AC/DC and DC/AC converters

The 1ED020I12-F2 from Infineon Technologies is a 2A single-channel isolated IGBT gate driver providing 1200V galvanic isolation with >50kV/µs common-mode transient immunity (CMTI). It integrates comprehensive protection features including desaturation (DESAT) short-circuit detection, under-voltage lockout (UVLO), and active Miller clamping to prevent parasitic turn-on. The DSO-16 package provides 8mm creepage and clearance, suitable for reinforced isolation in motor drives, solar inverters, and industrial power converters.

The 1ED020I12-F2 uses Infineon’s coreless transformer isolation technology to transmit gate drive signals across the galvanic isolation barrier. The input side receives logic-level PWM signals (3.0-5.5V) and modulates them onto the primary winding of the integrated transformer. The secondary side demodulates the signal and drives the output stage, which can source/sink 2A peak to charge/discharge the IGBT gate. DESAT protection monitors the IGBT collector-emitter voltage through an external high-voltage diode; if VCE exceeds the DESAT threshold during on-state, a fault is detected and the gate is actively pulled low to safely turn off the IGBT. The active Miller clamp connects the gate to COM through a low-impedance path when the output is low, preventing displacement current through the Miller capacitance from turning on the IGBT spuriously.

针脚 名称 说明
1 接地1 Input-side ground
2 IN+ Non-inverting PWM input
3 IN- Inverting PWM input
4 VCC1 Input-side supply (3.0-5.5V)
5-8 北卡罗来纳州 No connect (isolation gap)
9 VCC2 Output-side supply (15-30V)
10 出局 Gate drive output
11 CLAMP Active Miller clamp output
12 接地2 Output-side ground
13 DESAT DESAT detection input
14 /FAULT Fault output (active low)
15 /RDY Ready output (active low)
16 接地2 Output-side ground
  • Three-phase motor drive inverter IGBT gate drive
  • Solar inverter and UPS power stage gate driving
  • Welding machine and induction heating IGBT control
  • Industrial AC/DC and DC/AC power converter gate drive
模型 制造商 Isolation Iout CMTI
1ED3321MC12N 英飞凌 1200V 5A >100kV/µs
SI823x 硅实验室 5000V RMS 4A >50kV/µs
ADuM4220 ADI 5000V RMS 4A >50kV/µs
UCC21520 TI 5000V RMS 4A >100kV/µs
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