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1ED020I12-F2

2A isolated IGBT gate driver, 1200V isolation, >50kV/µs CMTI, DESAT protection, DSO-16

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Manufacturer Part：

1ED020I12-F2

Package：

DSO-16 (300mil, 10.0 x 7.5mm)

Description

Product Overview

The 1ED020I12-F2 from Infineon Technologies is a 2A single-channel isolated IGBT gate driver with 1200V isolation voltage. Featuring >50kV/µs CMTI, DESAT short-circuit protection, and UVLO in a DSO-16 package, it is designed for high-reliability motor drive and inverter applications.

Key Specifications

Output Peak Current	2A (source/sink)
Isolation Voltage	1200V
Supply (Output Side)	15V – 30V
Supply (Input Side)	3.0V – 5.5V
Propagation Delay	120ns (typ)
CMTI	>50kV/µs
UVLO	Yes (output side)
DESAT Protection	Yes (short-circuit detection)
Operating Temperature	-40°C to +125°C
Package	DSO-16 (300mil)

Features

1200V galvanic isolation for high-voltage IGBT/SiC driving
>50kV/µs CMTI for noise immunity in high dv/dt environments
Integrated DESAT detection for IGBT short-circuit protection
Active Miller clamping prevents parasitic turn-on
UVLO on output side prevents insufficient gate drive
IN+ and IN- inputs allow inverting or non-inverting configuration

Applications

Motor drive and inverter IGBT gate drive
Solar inverter and UPS power conversion
Welding equipment and induction heating
Industrial AC/DC and DC/AC converters

Product Introduction:1ED020I12-F2 Product Introduction

The 1ED020I12-F2 from Infineon Technologies is a 2A single-channel isolated IGBT gate driver providing 1200V galvanic isolation with >50kV/µs common-mode transient immunity (CMTI). It integrates comprehensive protection features including desaturation (DESAT) short-circuit detection, under-voltage lockout (UVLO), and active Miller clamping to prevent parasitic turn-on. The DSO-16 package provides 8mm creepage and clearance, suitable for reinforced isolation in motor drives, solar inverters, and industrial power converters.

Working Principle:1ED020I12-F2 Working Principle

The 1ED020I12-F2 uses Infineon’s coreless transformer isolation technology to transmit gate drive signals across the galvanic isolation barrier. The input side receives logic-level PWM signals (3.0-5.5V) and modulates them onto the primary winding of the integrated transformer. The secondary side demodulates the signal and drives the output stage, which can source/sink 2A peak to charge/discharge the IGBT gate. DESAT protection monitors the IGBT collector-emitter voltage through an external high-voltage diode; if VCE exceeds the DESAT threshold during on-state, a fault is detected and the gate is actively pulled low to safely turn off the IGBT. The active Miller clamp connects the gate to COM through a low-impedance path when the output is low, preventing displacement current through the Miller capacitance from turning on the IGBT spuriously.

Pin Description:1ED020I12-F2 Pin Definition and Functions

Pin	Name	Description
1	GND1	Input-side ground
2	IN+	Non-inverting PWM input
3	IN-	Inverting PWM input
4	VCC1	Input-side supply (3.0-5.5V)
5-8	NC	No connect (isolation gap)
9	VCC2	Output-side supply (15-30V)
10	OUT	Gate drive output
11	CLAMP	Active Miller clamp output
12	GND2	Output-side ground
13	DESAT	DESAT detection input
14	/FAULT	Fault output (active low)
15	/RDY	Ready output (active low)
16	GND2	Output-side ground