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IRF7413TRPBF

30V 13A N-ch MOSFET, 11mOhm RDS(on), SO-8, ultra-low on-resistance

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Manufacturer Part：

IRF7413TRPBF

Package：

SO-8 (5.0 x 6.2 x 1.75mm)

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Description

Product Overview

The IRF7413TRPBF from Infineon (International Rectifier) is a 30V N-channel HEXFET power MOSFET with ultra-low 11mOhm RDS(on) at 10V gate drive. Rated at 13A continuous drain current in an SO-8 package, it is designed for low-voltage power switching applications.

Key Specifications

VDS (Max) 30V
ID (Continuous) 13A (TA=25C)
RDS(on) Max @ VGS=10V 11 mOhm
RDS(on) Max @ VGS=4.5V 18 mOhm
VGS(th) 1.0V to 3.0V
Qg (Typical) 52 nC @ VGS=10V
Ciss (Typical) 1800 pF
PD (TA=25C) 2.5W
Operating Temperature -55 to 150 C
Package SO-8

Features

  • Ultra-low 11mOhm RDS(on) for minimal conduction losses
  • 13A current capability in compact SO-8 package
  • Generation V HEXFET technology
  • 100% avalanche tested
  • Logic-level gate threshold (1.0-3.0V)

Applications

  • DC-DC converter synchronous rectification
  • Motor drive and load switching
  • Battery management and protection
  • Power supply OR-ing and hot-swap
  • Notebook and motherboard VRM

The IRF7413TRPBF from Infineon is an N-channel HEXFET power MOSFET utilizing Generation V technology to achieve ultra-low on-resistance of 11mOhm at 10V gate drive. With a 30V drain-source voltage rating and 13A continuous drain current, it is optimized for low-voltage, high-current switching applications such as synchronous rectification in DC-DC converters, motor drive, and battery management. The SO-8 package with enhanced thermal characteristics enables 2.5W power dissipation at 25C ambient temperature. The low gate threshold (1.0-3.0V) supports logic-level gate drive.

The IRF7413TRPBF operates as a vertical power MOSFET using Infineon’s HEXFET Generation V technology. **Channel Formation**: When VGS exceeds the threshold (1.0-3.0V), an inversion layer forms at the semiconductor surface, creating a conductive channel between source and drain. The extremely low RDS(on) of 11mOhm is achieved through advanced trench gate technology and dense cell packing that maximizes channel width per unit area. **RDS(on) Characteristics**: At VGS=10V, RDS(on) is 11mOhm max. At logic-level VGS=4.5V, RDS(on) increases to 18mOhm due to incomplete channel enhancement. For minimum conduction loss, 10V gate drive is preferred. **Switching Behavior**: The total gate charge of 52nC determines the switching energy. At high switching frequencies, gate drive losses (Qg x VGS x f) become significant. The relatively high Ciss (1800pF) requires a low-impedance gate driver. **Body Diode**: The intrinsic body diode can conduct reverse current with a forward drop of 1.0V, useful in synchronous rectification. The reverse recovery time (74-110ns) and charge (200-300nC) must be considered in high-frequency switching designs.

Pin Name Description
1 Source Source terminal
2 Source Source terminal
3 Source Source terminal
4 Gate Gate control terminal
5 Drain Drain terminal (connected to tab)
6-8 Drain Drain terminals
  • Synchronous Rectification: Low-side MOSFET in buck converter output stage with 11mOhm minimizing I2R losses
  • Motor Drive: H-bridge and half-bridge driver for brushed DC motors at 12-24V
  • Battery Protection: Overcurrent disconnect switch in Li-ion battery management systems
  • Hot-Swap: Inrush current limiting and OR-ing in redundant power supply systems
  • Notebook VRM: Core voltage regulator MOSFET for mobile computing platforms
Model Manufacturer Key Difference
IRF7413PBF Infineon Tube packaging version (same die)
IRF7413ZTRPBF Infineon Lower Qg, improved switching
SI4884DY-T1-E3 Vishay 30V, 9.5mOhm, SO-8
FDS6690A onsemi 30V, 13mOhm, SO-8
AO4407A Alpha & Omega 30V, 8.5mOhm, SO-8, lower RDS
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