IRF6215PBF

The IRF6215PBF is a P-Channel HEXFET Power MOSFET from Infineon Technologies utilizing advanced process technology to achieve the lowest possible on-resistance per silicon area. Rated at -150V drain-source voltage and -13A continuous drain current, it offers 0.29 Ohm maximum on-resistance with 110W power dissipation capability. The TO-220 package enables efficient thermal management in high-power applications. This fifth-generation HEXFET combines fast switching speed and ruggedized design, making it suitable for high-side switching and power management circuits.

The IRF6215 operates as a voltage-controlled P-channel switch. Applying a negative gate-source voltage (beyond the threshold of -2V to -4V) creates a conductive channel between source and drain, allowing current to flow. The trench MOSFET structure minimizes on-resistance while maintaining fast switching through reduced gate charge (66nC typical). The device is fully avalanche rated, meaning it can absorb inductive energy spikes without external clamping. A body diode provides inherent reverse conduction for bridge and motor drive applications.

• High-side load switching in power distribution
• Motor H-bridge drive circuits
• DC-DC buck converter high-side switch
• Battery disconnect and protection circuits
• Automotive reverse polarity protection