FM25CL64B-GTR

The FM25CL64B-GTR from Infineon Technologies is a 64Kbit non-volatile F-RAM memory using an advanced ferroelectric process. Unlike serial Flash and EEPROM, FM25CL64B performs write operations at bus speed with no write delays, enabling the next bus cycle to commence immediately without data polling. With 100 trillion read/write cycle endurance and 151-year data retention, it is a direct hardware replacement for serial EEPROM in applications requiring frequent or rapid writes.

The FM25CL64B uses ferroelectric RAM (F-RAM) technology where data is stored using ferroelectric polarization rather than charge. Each memory cell contains a ferroelectric capacitor that can be polarized in one of two states, representing a 0 or 1. Read operations involve applying voltage to sense the polarization state, while write operations change the polarization. Since the polarization is non-volatile and does not require charge pumps, writes complete at bus speed with no delay. The read-restore mechanism means every read also refreshes the cell, similar to DRAM but with inherent non-volatility.

• Electric vehicle drivetrain parameter storage with frequent writes
• Industrial automation event and configuration logging
• Smart metering data accumulation and tariff storage
• Medical equipment calibration and patient data logging
• Automotive ECU non-volatile parameter storage