FM25CL64B

The FM25CL64B from Infineon Technologies is the base product number for a family of 64Kbit (8K x 8) serial F-RAM devices with SPI interface. Using an advanced ferroelectric process, this non-volatile memory performs read and write operations similar to RAM with no write delays. With 100 trillion read/write cycle endurance and 151-year data retention, it eliminates the need for wear leveling and provides a direct hardware replacement for serial EEPROM and Flash memory in applications requiring frequent or rapid writes.

The FM25CL64B uses ferroelectric RAM (F-RAM) technology where each memory cell stores data using ferroelectric polarization of a perovskite crystal. Unlike conventional Flash or EEPROM that use floating-gate charge storage requiring high-voltage erase/program cycles, F-RAM writes data by applying an electric field that switches the ferroelectric polarization. This process is inherently fast and does not require charge pumps, enabling NoDelay bus-speed writes. The read-restore mechanism ensures data integrity: each read operation also refreshes the cell. The SPI interface supports both Mode 0 and Mode 3 at clock rates up to 20MHz.

• Industrial data logging with high-frequency writes
• Smart meter cumulative energy and event storage
• Automotive ECU calibration and configuration data
• Medical device patient data and event logs
• Enterprise RAID controller write-log caching