The FM25V01A-GTR is a 128Kbit (16KB) F-RAM (Ferroelectric RAM) from Infineon in SOIC-8 with SPI interface. F-RAM uses ferroelectric PZT (lead zirconate titanate) capacitors at each memory cell: a polarization hysteresis stores data as the direction of electric dipoles. When an electric field is applied, the dipoles align; when the field is removed, they retain their orientation. Unlike EEPROM/Flash which use charge on a floating gate (requiring high voltage and slow tunneling), F-RAM writes at bus speed (40MHz SPI clock, 108ns write cycle) with no write delay or busy polling needed. Endurance is 10^14 read/write cycles (100 trillion), effectively unlimited for most applications. Data retention is 151 years at 85C. The SPI interface supports mode 0 (CPOL=0, CPHA=0) and mode 3 (CPOL=1, CPHA=1) at clock rates up to 40MHz. The HOLD pin pauses serial communication without deselecting the device. Write protect (WP) pin combined with status register BP bits protects the upper quadrant of memory. Deep power-down mode reduces current to 1uA. The -A revision adds higher speed (40MHz vs 20MHz in original FM25V01).