Product Overview
The FQP47P06 is a -60 V P-channel enhancement-mode power MOSFET from onsemi (formerly Fairchild), utilizing the QFET planar stripe DMOS technology. In a through-hole TO-220 package, it provides -47 A continuous drain current with a maximum RDS(on) of 26 mΩ at VGS = -10 V. The device is 100% avalanche tested with 820 mJ single-pulse avalanche energy, making it well-suited for high-side switching, SMPS, and audio amplifier applications.
Key Specifications
| VDS | -60 V |
| ID (continuous) | -47 A @ TC = 25 °C / -21.2 A @ TC = 100 °C |
| RDS(on) | 21 mΩ typ / 26 mΩ max @ VGS = -10 V |
| VGS(th) | -2.0 V to -4.0 V |
| Qg | 84 nC typ / 110 nC max |
| Ciss | 2800 pF typ / 3600 pF max |
| PD | 160 W @ TC = 25 °C |
| Avalanche Energy (EAS) | 820 mJ (single pulse) |
| Body Diode VSD | -4.0 V max @ -30 A |
| Operating Temperature | -55 °C to +175 °C |
| Package | TO-220 (10.67 x 4.7 x 9.4 mm, Through-Hole) |
Features
- QFET planar stripe DMOS technology for low RDS(on) and excellent switching performance
- 100% avalanche tested ensuring ruggedness in inductive load applications
- Low gate charge (84 nC) and low Crss (320 pF) optimize switching efficiency
- P-channel eliminates charge-pump requirement for high-side switch applications
- 160 W power dissipation in standard TO-220 package
Applications
- SMPS high-side switching
- Audio amplifier output stage
- DC motor H-bridge drive (P-channel side)
- Battery reverse-polarity protection
- Power factor correction (PFC)