Product Overview
The onsemi BSS84LT1G is a P-channel enhancement-mode MOSFET in a compact SOT-23 surface-mount package. With a -50 V drain-source voltage rating, -130 mA continuous drain current, and 10 Ω on-resistance at VGS = -5 V, it is designed for low-power switching and load control in space-constrained applications. The device uses DMOS technology for reliable enhancement-mode operation.
Key Specifications
| Channel Type | P-Channel Enhancement |
| VDS (Drain-Source Voltage) | -50 V |
| ID (Continuous Drain Current) | -130 mA |
| RDS(on) @ VGS = -5 V | 10 Ω max |
| RDS(on) @ VGS = -10 V | 5 Ω typ |
| VGS(th) (Gate Threshold) | -0.9 V ~ -2.0 V |
| Qg (Total Gate Charge) | 2.2 nC @ VGS = -10 V |
| Ciss (Input Capacitance) | 36 pF |
| Power Dissipation | 225 mW |
| Package | SOT-23-3 (TO-236) |
| Operating Temperature | -55°C ~ +150°C |
| Forward Transconductance | 50 mS |
Features
- Compact SOT-23 surface-mount package for space-constrained designs
- Voltage-controlled P-channel small signal switch
- High-density cell design for low on-resistance
- Logic-level gate drive compatible
- Low gate charge (2.2 nC) for fast switching
- Enhancement-mode operation for normally-off safety
Applications
- Low-current high-side load switching
- Battery-powered device power control
- Level shifting and signal gating
- Load management in portable electronics
- Logic-level power routing in MCU circuits