SI2302CDS-T1-E3

The SI2302CDS-T1-E3 is an N-channel enhancement mode TrenchFET power MOSFET from Vishay Siliconix, featuring 20V drain-source voltage and 2.6A continuous drain current in a compact SOT-23-3 package. The trench gate technology achieves 57mOhm maximum on-resistance at 4.5V VGS, with 75mOhm at the logic-level 2.5V gate drive. The low typical gate charge of 3.5nC enables efficient high-frequency switching in DC-DC converters. Its small footprint and low profile make it ideal for space-constrained portable electronics.

The SI2302CDS uses Vishay’s TrenchFET technology, where vertical trench gates are etched into the silicon and filled with polysilicon to form the gate electrode. This structure reduces cell size and on-resistance compared to planar MOSFETs. When VGS exceeds the threshold (~0.85V), an inversion layer forms along the trench sidewalls, creating a conductive channel between source and drain. The P-body diode provides inherent reverse conduction. The compact die size and low gate charge minimize switching losses at frequencies up to several MHz.

• Load switch in smartphones and tablets
• DC-DC buck converter low-side MOSFET
• Battery disconnect and protection in portable devices
• Power routing in dual-battery systems
• Motor drive in micro-actuators and fans