Product Overview
The SI2302CDS-T1-E3 from Vishay Siliconix is an N-channel TrenchFET power MOSFET rated at 20V VDS and 2.6A in a SOT-23-3 surface-mount package. With 57mOhm RDS(on) at 4.5V and 3.5nC typical gate charge, it is optimized for load switching and DC-DC conversion in portable devices.
Key Specifications
| VDS (Max) | 20V |
| ID (Continuous) | 2.6A (Ta=25C) |
| RDS(on) Max | 57mOhm @ VGS=4.5V |
| RDS(on) @ 2.5V | 75mOhm |
| VGS(th) Max | 850mV |
| Qg (Typical) | 3.5nC @ 4.5V |
| Power Dissipation | 710mW (Ta) |
| Package | SOT-23-3 (TO-236) |
Features
- TrenchFET technology for low RDS(on)
- Logic-level gate drive (2.5V compatible)
- Low gate charge for high-frequency switching
- Compact SOT-23 footprint
- RoHS3 compliant
Applications
- Load switching in portable devices
- DC-DC converter power stage
- Battery management in handheld electronics
- Power routing and battery switchover
- Motor drive in small actuators