الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > SI2302CDS-T1-E3

SI2302CDS-T1-E3

N-ch TrenchFET MOSFET, 20V, 2.6A, 57mOhm, SOT-23-3

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جزء الشركة المصنعة ： جزء الشركة المصنعة

SI2302CDS-T1-E3

الحزمة ： الحزمة

SOT-23-3 (TO-236) (2.9 x 1.6 x 1.45 mm)

الوصف

نظرة عامة على المنتج

The SI2302CDS-T1-E3 from Vishay Siliconix is an N-channel TrenchFET power MOSFET rated at 20V VDS and 2.6A in a SOT-23-3 surface-mount package. With 57mOhm RDS(on) at 4.5V and 3.5nC typical gate charge, it is optimized for load switching and DC-DC conversion in portable devices.

المواصفات الرئيسية

VDS (Max)	20V
ID (Continuous)	2.6A (Ta=25C)
RDS(on) Max	57mOhm @ VGS=4.5V
RDS(on) @ 2.5V	75mOhm
VGS(th) Max	850mV
Qg (Typical)	3.5nC @ 4.5V
تبديد الطاقة	710mW (Ta)
الحزمة	SOT-23-3 (To-236)

الميزات

TrenchFET technology for low RDS(on)
Logic-level gate drive (2.5V compatible)
Low gate charge for high-frequency switching
Compact SOT-23 footprint
RoHS3 compliant

التطبيقات

Load switching in portable devices
DC-DC converter power stage
Battery management in handheld electronics
Power routing and battery switchover
Motor drive in small actuators

مقدمة المنتج:SI2302CDS-T1-E3 مقدمة المنتج

The SI2302CDS-T1-E3 is an N-channel enhancement mode TrenchFET power MOSFET from Vishay Siliconix, featuring 20V drain-source voltage and 2.6A continuous drain current in a compact SOT-23-3 package. The trench gate technology achieves 57mOhm maximum on-resistance at 4.5V VGS, with 75mOhm at the logic-level 2.5V gate drive. The low typical gate charge of 3.5nC enables efficient high-frequency switching in DC-DC converters. Its small footprint and low profile make it ideal for space-constrained portable electronics.

مبدأ العمل:SI2302CDS-T1-E3 مبدأ العمل

The SI2302CDS uses Vishay’s TrenchFET technology, where vertical trench gates are etched into the silicon and filled with polysilicon to form the gate electrode. This structure reduces cell size and on-resistance compared to planar MOSFETs. When VGS exceeds the threshold (~0.85V), an inversion layer forms along the trench sidewalls, creating a conductive channel between source and drain. The P-body diode provides inherent reverse conduction. The compact die size and low gate charge minimize switching losses at frequencies up to several MHz.

وصف الدبوس:SI2302CDS-T1-E3 تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	البوابة	المدخلات	Gate control terminal
2	المصدر	الطاقة	Source terminal
3	الصرف	المخرجات	Drain terminal

Application Scenarios:In which products and applications isSI2302CDS-T1-E3 مستعمل

Load switch in smartphones and tablets
DC-DC buck converter low-side MOSFET
Battery disconnect and protection in portable devices
Power routing in dual-battery systems
Motor drive in micro-actuators and fans

Alternative Models:What chips are recommended as replacements for SI2302CDS-T1-E3

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
فيشاي	SI2304DDS-T1-E3	SOT-23	N-ch, 20V, 1.8A
أونسمي	NTR4003NT1G	SOT-23	N-ch, 60V, 190mA
إنفينيون	BSR138NH6327	SOT-23	N-ch, 50V, 320mA
شركة ديودز	DMN2075U	SOT-23	N-ch, 20V, 1.5A