الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > IXTT10N100D2

IXTT10N100D2

N-Channel depletion-mode MOSFET, 1000V, 10A, 1.5Ohm, normally-on, TO-268AA, 695W

14959

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جزء الشركة المصنعة ： جزء الشركة المصنعة

IXTT10N100D2

الحزمة ： الحزمة

TO-268AA / D3PAK (15.75 x 13.08 x 4.83 mm)

الوصف

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The IXTT10N100D2 is a Ixys product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.

المواصفات الرئيسية

النوع	N-Channel Depletion-Mode Power MOSFET
VDS	1000 V
VGS(max)	+/- 20V
RDS(on) Max @ 10V	1.5 Ohm @ 5A
ID @ 25C	10A (Tc)
VGS(off) Max	-4.5 V
Gate Charge (Qg)	200 nC (Typ) @ 5V
Input Capacitance (Ciss)	5320 pF
Reverse Transfer Cap (Crss)	70 pF
تبديد الطاقة	695 W (Tc)
RthJC	0.18 K/W
درجة حرارة التشغيل	-55 C to +150 C (TJ)
الحزمة	TO-268AA (D3PAK, SMD)
الشركة المصنعة	IXYS (now Littelfuse)
حالة الجزء	نشط

الميزات

N-Channel depletion-mode (normally-on) MOSFET; 1000V drain-source voltage; 10A continuous drain current at 25C; 1.5 Ohm max RDS(on) at VGS=10V; Normally-on operation (conducts at VGS=0V); Linear mode tolerant; Low RDS(on) for depletion device; Useable body diode; 695W power dissipation (Tc); Low RthJC of 0.18 K/W; UL 94 V-0 flammability qualified; TO-268AA surface-mount package; Active product status from Littelfuse

التطبيقات

Audio amplifiers (Class A); Start-up circuits for power supplies; Current regulators and current sources; Active loads and dummy loads; Protection circuits and crowbars; Ramp generators; Normally-on switching applications; High-voltage linear regulators; Solid-state relays (normally-closed); Telecom line interface

مقدمة المنتج:IXTT10N100D2 مقدمة المنتج

The IXTT10N100D2 from IXYS (now Littelfuse) is an N-Channel depletion-mode (normally-on) power MOSFET rated at 1000V drain-source voltage with 10A continuous drain current, housed in a TO-268AA (D3PAK) surface-mount package. Unlike the more common enhancement-mode MOSFETs that are normally-off, depletion-mode devices conduct current at VGS=0V and require a negative gate-source voltage to turn off. This normally-on characteristic makes the IXTT10N100D2 ideal for applications where the circuit must remain active without gate drive, such as start-up circuits, current regulators, active loads, and normally-closed solid-state relays. The device features a maximum RDS(on) of 1.5 Ohm at VGS=10V, 200 nC typical gate charge, and an exceptionally low thermal resistance of 0.18 K/W (junction-to-case) enabling 695W power dissipation with adequate heatsinking. The D2 series represents the second-generation depletion-mode technology from IXYS, offering improved performance over the original D series. The TO-268AA package provides a large mounting tab for direct heatsink attachment in surface-mount applications.

مبدأ العمل:IXTT10N100D2 مبدأ العمل

The IXTT10N100D2 operates as an N-Channel depletion-mode MOSFET, which differs fundamentally from the more common enhancement-mode type. In a depletion-mode device, a conductive channel exists between drain and source at VGS=0V due to the implanted channel region in the silicon. The device is normally-on, meaning current flows from drain to source with zero gate voltage applied. To turn the device off, a negative gate-source voltage (VGS) must be applied that depletes the channel of charge carriers. The gate-source cutoff voltage (VGS(off)) is specified as a maximum of -4.5V, meaning the device turns off when VGS is more negative than this threshold. In linear operation, the drain current is controlled by the gate voltage between VGS(off) and 0V, making depletion-mode MOSFETs natural current sources or active loads. The IXYS planar MOSFET structure provides a linear mode tolerant design, meaning the device can safely operate in the saturation region (simultaneous high VDS and ID) without the thermal runaway issues that plague some enhancement-mode MOSFETs in linear mode. The internal body diode between source and drain provides reverse conduction capability, and the device can block up to 1000V in the off state.

وصف الدبوس:IXTT10N100D2 تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	البوابة	المدخلات	Gate terminal; controls channel conduction. Negative voltage (to -4.5V) turns device OFF; 0V = ON.
2	الصرف	المخرجات	Drain terminal; high-voltage power connection (tab/mounting base)
3	المصدر	الطاقة	Source terminal; reference for gate drive voltage
علامة التبويب	الصرف	Thermal	Mounting tab internally connected to drain; for heatsink attachment. Isolate from ground for high-side operation.

Application Scenarios:In which products and applications isIXTT10N100D2 مستعمل

Start-Up Circuits: Provides initial bias current in offline power supplies where the normally-on characteristic delivers start-up current before the control IC is active, then turns off when VGS goes negative.
Current Regulators: Acts as a constant current source in linear regulator circuits where the depletion-mode characteristic provides inherent current limiting without gate drive circuitry.
Audio Amplifiers: Serves as the active load in Class A audio amplifier stages where the depletion-mode MOSFET provides a high-impedance AC load with DC bias current, delivering superior linearity.
Protection Circuits: Normally-closed solid-state switch in safety circuits where the default state must be conducting, requiring active gate drive to interrupt the circuit during fault conditions.

Alternative Models:What chips are recommended as replacements for IXTT10N100D2

الشركة المصنعة	رقم الجزء	الحزمة	VDS	الملاحظات
IXYS/Littelfuse	IXTH10N100D2	TO-247	1000V	Through-hole version, same die
IXYS/Littelfuse	IXTT10N100D	TO-268	1000V	First generation (D series), 1.4 Ohm
IXYS/Littelfuse	IXTA3N100D2	TO-263	1000V	Lower current (3A), D2PAK
إنفينيون	BSP316P	SOT-223	60V	Low-voltage depletion-mode alternative