الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > IS62WV51216BLL-55BLI

IS62WV51216BLL-55BLI

8Mbit async SRAM, 512Kx16, 2.5-3.6V, 55ns, ultra-low power, 48-mini BGA, Industrial

3838

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جزء الشركة المصنعة ： جزء الشركة المصنعة

IS62WV51216BLL-55BLI

الحزمة ： الحزمة

48-Mini BGA (7.2 x 8.7 x 0.9 mm)

الوصف

نظرة عامة على المنتج

The IS62WV51216BLL-55BLI is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.

المواصفات الرئيسية

Memory Type	Asynchronous SRAM
الكثافة	8Mbit (1MB)
Organization	512K x 16
Access Time	55 ns
الواجهة	Parallel (Asynchronous)
جهد الإمداد	2.5 فولت إلى 3.6 فولت
Operating Power	36 mW (Typ)
CMOS Standby Current	12 uW (Typ)
Address Bus Width	19 bits (A0-A18)
Data Bus Width	16 bits (I/O0-I/O15)
Byte Control	LB (lower), UB (upper)
Chip Enables	CS1 (active-low), CS2 (active-high)
Fully Static Operation	No clock or refresh required
درجة حرارة التشغيل	-40 C to +85 C (Industrial)
الحزمة	48-Mini BGA (7.2 x 8.7 x 0.9 mm)
Also Available	44-TSOP Type II

الميزات

8Mbit ultra-low power CMOS static RAM; 512K x 16 organization; 55ns access time; Wide voltage range: 2.5V to 3.6V; Ultra-low CMOS standby power (12 uW typical); No clock or refresh required (fully static); TTL-compatible interface levels; Three-state outputs; Upper and lower byte control (UB, LB); Dual chip enable (CS1, CS2) for easy expansion; Industrial temperature grade (-40C to +85C); 48-Mini BGA and 44-TSOP II package options; Lead-free (matte Sn) available

التطبيقات

Battery-backed memory systems; Embedded processor cache; Industrial control systems; Data logging and buffering; Portable and handheld devices; Communication equipment; Hard disk drive buffer; Automotive body electronics

مقدمة المنتج:IS62WV51216BLL-55BLI مقدمة المنتج

The IS62WV51216BLL-55BLI from ISSI is an 8Mbit ultra-low power CMOS static RAM organized as 512K words by 16 bits, fabricated using ISSI’s high-performance CMOS technology. With a 55ns access time and supply voltage range of 2.5V to 3.6V, this device is optimized for battery-powered and low-power embedded applications where data retention with minimal power consumption is critical. The fully static design requires no clock or refresh, simplifying memory controller design and ensuring data integrity without periodic refresh cycles. The ultra-low CMOS standby power of just 12 uW typical makes this SRAM ideal for always-on applications where the memory must retain data during long periods of system idle. The BLL designation indicates the 2.5-3.6V voltage range (B series), 55ns speed grade (55), BGA package (B), and industrial temperature grade (I). Dual chip enable inputs (CS1 active-low and CS2 active-high) simplify memory expansion, while upper byte (UB) and lower byte (LB) control signals enable byte-wide read and write operations on the 16-bit data bus.

مبدأ العمل:IS62WV51216BLL-55BLI مبدأ العمل

The IS62WV51216BLL-55BLI operates as a fully static asynchronous SRAM where each memory cell consists of a 6-transistor CMOS flip-flop that retains its stored bit as long as power is applied, without requiring periodic refresh cycles. Address inputs (A0-A18) directly decode to select one of 512K x 16 bit locations through row and column decoders. When CS1 is low and CS2 is high, the device is selected and responds to control inputs. A read operation occurs when WE is high, OE is low, and the appropriate byte enable (LB for I/O0-I/O7, UB for I/O8-I/O15) is low; the data at the selected address appears on the I/O pins after the 55ns access time. A write operation occurs when WE is low; data on the I/O pins is written to the selected address with the byte enables controlling which byte is written. When deselected (CS1 high or CS2 low), the device enters a low-power standby mode where CMOS input levels reduce power consumption to just 12 uW typical. The three-state outputs go to high impedance when the device is deselected, when OE is high, or when both byte enables are high, allowing the I/O bus to be shared with other devices.

وصف الدبوس:IS62WV51216BLL-55BLI تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
A0-A18	Address Inputs	المدخلات	19-bit address selects one of 512K x 16 memory locations
I/O0-I/O7	Lower Byte Data	الإدخال/الإخراج	Lower byte bidirectional data bus (controlled by LB)
I/O8-I/O15	Upper Byte Data	الإدخال/الإخراج	Upper byte bidirectional data bus (controlled by UB)
CS1	Chip Enable 1	المدخلات	Active-low chip select; must be low to select device
CS2	Chip Enable 2	المدخلات	Active-high chip select; must be high to select device
OE	Output Enable	المدخلات	Active-low output enable; gates data onto I/O during reads
WE	Write Enable	المدخلات	Active-low write enable; controls writing and reading of memory
LB	Lower Byte Control	المدخلات	Active-low lower byte enable; controls I/O0-I/O7
UB	Upper Byte Control	المدخلات	Active-low upper byte enable; controls I/O8-I/O15

Application Scenarios:In which products and applications isIS62WV51216BLL-55BLI مستعمل

Battery-Backed Memory: Retains critical data in battery-powered systems with 12 uW standby power enabling months of data retention on a coin cell.
Embedded Processor Cache: Provides 1MB of fast 55ns SRAM cache for embedded processors without requiring refresh logic or clock synchronization.
Industrial Data Logging: Buffers sensor measurements and event records in industrial equipment with fully static operation ensuring data integrity during power interruptions.
Communication Buffers: Stores packet data and routing tables in networking equipment with byte-level control enabling efficient header and payload manipulation.

Alternative Models:What chips are recommended as replacements for IS62WV51216BLL-55BLI

الشركة المصنعة	رقم الجزء	الحزمة	الكثافة	الملاحظات
ISSI	IS62WV51216BLL-55TLI	44-TSOP II	8Mbit	TSOP package variant
ISSI	IS62WV51216ALL-55BLI	48-Mini BGA	8Mbit	1.65-2.2V version
Cypress	CY62157EV30LL-55ZSXI	48-BGA	8Mbit	Pin-compatible alternative
الرقاقة الدقيقة	AT68166FT-55BUI	48-BGA	8Mbit	Radiation-tolerant alternative