MP4560DN-LF-Z


55V 2A buck converter, 2MHz, 250mOhm FET, SOIC-8 EP

5171

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制造商零件:

MP4560DN-LF-Z

包装:

SOIC-8 Exposed Pad (5.0 x 4.0 x 1.52 mm)

品牌:
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说明

产品概览

The MP4560DN-LF-Z from Monolithic Power Systems (MPS) is a 55V, 2A step-down buck converter with integrated high-side MOSFET in an SOIC-8 EP package. With 3.8-55V input, up to 2MHz switching frequency, 120uA Iq, pulse-skipping at light load, and 95% efficiency, it is designed for automotive and industrial DC-DC applications including EMI-sensitive AM radio environments.

主要规格

拓扑结构 Non-synchronous buck (step-down)
输入电压 3.8V to 55V (4.5V startup)
Output Voltage 0.8V to 52V (adjustable)
输出电流 2A continuous
Internal MOSFET RDS(ON) 250 mOhm (high-side)
开关频率 Up to 2MHz (programmable)
Efficiency Up to 95%
静态电流 120 uA typical
关机电流 12 uA
Reference Voltage 0.8V
EN Pin Active high, 1.2V/1.5V thresholds
软启动 Internal, 0.45ms
Pulse Skipping Automatic at light load
UVLO 3.0V rising / 2.6V falling
Protection OCP, thermal shutdown
工作温度 -40 to +125 C (junction)
包装 SOIC-8 EP (5.0 x 4.0 x 1.52 mm)
Status NRND (MP4572 recommended for new designs)

特点

  • 3.8-55V wide input voltage range
  • 250mOhm integrated high-side MOSFET
  • Up to 2MHz programmable switching frequency
  • AM radio band EMI avoidance at 2MHz
  • 95% peak efficiency
  • Automatic pulse-skipping at light load
  • Internal soft-start prevents overshoot
  • Frequency foldback during startup
  • 12uA low shutdown current
  • Ceramic capacitor stable

应用

  • Automotive DC-DC converters (12V/24V battery)
  • Industrial power supplies
  • AM radio EMI-sensitive applications
  • Distributed power architectures

The MP4560DN-LF-Z from Monolithic Power Systems (MPS) is a 55V, 2A non-synchronous step-down converter with integrated 250mOhm high-side MOSFET in an SOIC-8 exposed pad package. The DN denotes the SOIC-8 EP (DIP-equivalent narrow) package, LF indicates lead-free, and Z denotes tape and reel (2500 pcs/reel). The device operates from a wide 3.8V to 55V input range, accommodating automotive 12V/24V battery rails with transient headroom. The programmable switching frequency up to 2MHz allows the designer to avoid AM radio band EMI interference by switching above the AM band. Current mode control provides fast transient response and easy loop compensation. At light loads, the device automatically enters pulse-skipping mode to reduce switching losses and maintain high efficiency across the entire load range. The 120uA quiescent current and 12uA shutdown current make it suitable for battery-powered applications. Internal soft-start (0.45ms) prevents output overshoot during startup, and frequency foldback helps prevent inductor current runaway. The device is NRND; MPS recommends the MP4572GQB (2A, 60V, synchronous) for new designs.

The MP4560DN-LF-Z operates through five subsystems: (1) Power Stage: An integrated 250mOhm N-channel high-side MOSFET switches VIN to the SW node. An external Schottky diode (or catch diode) provides the freewheeling path for inductor current during the OFF period. The inductor filters the pulsating switch voltage into a smooth DC output. (2) Current Mode Control: An internal current sense amplifier measures the MOSFET current each switching cycle. The error amplifier compares the FB pin voltage with the 0.8V reference and generates a COMP voltage that sets the peak current threshold. This peak-current-mode architecture provides fast line and load transient response, cycle-by-cycle current limiting, and simple Type-II compensation. (3) Pulse Skipping: When the load current drops below a threshold where the minimum ON time would push the output above regulation, the device enters pulse-skipping mode. It skips switching cycles entirely, reducing effective switching frequency and minimizing switching losses at light load. (4) Bootstrap Driver: The high-side MOSFET gate driver is powered by an external bootstrap capacitor between BST and SW. An internal bootstrap regulator charges this capacitor to approximately 5V from VIN when SW is low. (5) Protection: Cycle-by-cycle current limiting protects the MOSFET from overcurrent. Thermal shutdown disables switching when the die temperature exceeds approximately 160C. UVLO prevents operation below 3.0V.

针脚 名称 类型 说明
1 BST 电源 Bootstrap capacitor (connect to SW via external cap)
2 接地 电源 Signal ground
3 SW 电源 Switch node (inductor and diode connection)
4 VIN 电源 Input supply (3.8-55V)
5 EN 输入 Enable (1.5V rising/1.2V falling, internal 1uA pullup)
6 COMP 输入/输出 Error amplifier output (external compensation network)
7 FB 输入 Feedback (0.8V reference, external resistor divider)
8 FREQ 输入 Frequency set (resistor to GND programs 200kHz-2MHz)
  • 12V automotive to 5V/2A buck converter at 2MHz switching to avoid AM radio EMI interference with pulse-skipping light-load efficiency
  • 24V industrial supply to 3.3V/2A DC-DC with 55V input transient tolerance and 0.8V reference feedback 48V telecom rail to 12V intermediate bus at 500kHz with current mode control for fast load transient response
  • Battery-powered 12V to 1.8V MCU supply with 12uA shutdown current and internal 0.45ms soft-start
模型 制造商 Vin max Iout 说明
MP4572GQB MPS 60V 2A MPS recommended replacement (sync)
LM5017 TI 100V 600mA Higher voltage, lower current
TNS4250DN TI 42V 2.5A Similar SOIC-8 EP
MAX17503 ADI/Maxim 60V 2.5A Higher current, internal compensation
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