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NTR1P02LT1G

-20V P-ch MOSFET, 0.80R RDS(on), -0.4A, low Vth, SOT-23

12500

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Manufacturer Part：

NTR1P02LT1G

Package：

SOT-23-3 (2.90 x 1.30 x 1.00 mm)

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Description

Product Overview

The NTR1P02LT1G from onsemi is a -20V P-channel enhancement-mode MOSFET with 0.80 Ohm RDS(on) at VGS=-10V, -0.4A continuous drain current, and low threshold voltage for logic-level drive in a SOT-23 package.

Key Specifications

Type P-Channel Enhancement MOSFET
VDS -20 V
VGS +/-8 V
ID (continuous) -0.4 A @ TA=25°C
ID (pulsed) -1.0 A
RDS(on) @ VGS=-10V 0.80 Ohm max
RDS(on) @ VGS=-4.5V 1.10 Ohm max
VGS(th) -0.4 to -1.0 V
Power Dissipation 225 mW @ TA=25°C
Operating Temperature -55°C to +150°C
Package SOT-23-3

Features

  • Low 0.80 Ohm RDS(on) at -10V for efficient battery load switching
  • Ultra-low threshold (VGS(th) max -1.0V) for sub-3V logic-level drive
  • Compact SOT-23 package for portable and battery-powered applications

Applications

  • Battery load switching and power management in portable devices

The NTR1P02LT1G from onsemi is a P-channel enhancement-mode MOSFET designed for battery-powered portable applications. The device features a low on-resistance of 0.80 Ohm maximum at VGS=-10V and 1.10 Ohm at VGS=-4.5V. The ultra-low threshold voltage (VGS(th) max = -1.0V) enables direct drive from 2.5V to 3V logic supplies, making it ideal for single-cell Li-Ion battery switching. The -20V drain-source rating provides adequate margin for 3V to 12V battery bus applications. The compact SOT-23 package minimizes board space in portable designs. The device is suitable for load switching, battery disconnect, and power routing in cell phones, PDAs, and other battery-operated equipment.

The NTR1P02LT1G is a P-channel enhancement-mode MOSFET using onsemi’s planar stripe DMOS technology. (1) P-Channel Enhancement: The device is normally off (no channel at VGS=0). When VGS is pulled below the threshold (negative), an inversion layer forms under the gate oxide, creating a conduction channel between source and drain. The very low threshold (-0.4 to -1.0V) means that only a small gate drive is needed to turn the device on. (2) Low RDS(on): The planar stripe DMOS cell geometry provides low specific on-resistance. At VGS=-4.5V (typical 3.3V system gate drive), RDS(on) is only 1.10 Ohm maximum, resulting in low conduction losses at the rated 0.4A drain current (P = I2R = 0.16 x 1.1 = 0.18W). (3) Logic-Level Drive: With VGS(th) as low as -0.4V, the MOSFET can be driven from 2.5V logic. At VGS=-2.5V, the device provides sufficient overdrive for many low-current switching applications.

Pin Name Function
1 G Gate
2 S Source
3 D Drain
  • Battery load switching in cell phones and PDAs at 2.5-5V
  • Low-current power routing and battery disconnect with logic-level gate
Manufacturer Part Number Package Notes
onsemi FDV304P SOT-23 -25V, 1.1 Ohm, ESD Zener
Diodes Inc DMP2305U-7 SOT-23 -20V, 0.65 Ohm, lower Ron
Vishay SI2323DS-T1-E3 SOT-23 -20V, 0.6 Ohm
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