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FQD4N25TM

250V N-ch MOSFET, 2.0R RDS(on), 1.8A, DPAK TO-252

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Manufacturer Part：

FQD4N25TM

Package：

DPAK / TO-252-3 (6.60 x 6.10 x 2.30 mm)

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Description

Product Overview

The FQD4N25TM from onsemi is an N-channel 250V/1.8A MOSFET with 2.0 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package, designed for low-voltage switching applications.

Key Specifications

Type N-Channel Enhancement MOSFET
VDSS 250 V
ID 1.8 A (continuous @ TC=25°C)
RDS(on) 2.0 Ohm max @ VGS=10V
VGS(th) 2.0 to 4.0 V
Total Gate Charge 6.0 nC typical
Power Dissipation 25 W @ TC=25°C
Operating Temperature -55°C to +150°C
Package DPAK / TO-252-3

Features

  • 250V N-ch MOSFET with 2.0 Ohm RDS(on) in DPAK surface-mount
  • 6nC low gate charge for efficient high-voltage switching

Applications

  • Offline SMPS primary switch and PFC boost converter

The FQD4N25TM from onsemi is a 250V N-channel enhancement-mode MOSFET designed for low-power offline switching applications. The device features 2.0 Ohm maximum on-resistance at VGS=10V and 1.8A continuous drain current in the compact DPAK (TO-252) surface-mount package. The 250V breakdown voltage makes it suitable for universal offline (85-265VAC) SMPS primary-side switching at output power levels up to approximately 30W. The 6nC total gate charge enables efficient switching at moderate frequencies (50-200kHz) with simple gate drive circuits. The DPAK package provides a good balance of thermal performance and board space, with 25W power dissipation capability at TC=25°C. The TM suffix indicates tape and reel packaging.

The FQD4N25TM is an N-channel enhancement-mode vertical DMOS power MOSFET. (1) N-Channel Enhancement: The device is normally off. When VGS exceeds the threshold (2.0-4.0V), an inversion layer forms under the gate oxide, creating a conduction channel between source and drain. The body diode (anode at source, cathode at drain) provides a freewheeling path for inductive loads. (2) Vertical DMOS: The vertical current flow (from drain at the bottom to source at the top) maximizes the channel density and minimizes the die area for a given RDS(on). The double-diffused MOS (DMOS) cell structure provides a short channel length for low on-resistance while maintaining adequate breakdown voltage. (3) High-Voltage Structure: The 250V breakdown voltage is achieved through a lightly-doped drain drift region that absorbs the depletion layer under high VDS. This drift region contributes to the on-resistance, hence the 2.0 Ohm RDS(on) is typical for a 250V device at this current rating.

Pin Name Function
1 G Gate
2 D Drain (connected to tab)
3 S Source
Tab D Drain (thermal/electrical)
  • Offline SMPS primary switch up to 30W at 250V breakdown
  • Low-power PFC boost and high-voltage load switching
Manufacturer Part Number Package Notes
onsemi FQD3N50TM DPAK 500V, 1.4A, higher voltage
Infineon IPD60R180P7S DPAK 600V, 1.8A, SuperJunction
ST STD4NK50ZT4 DPAK 500V, 2A, Zener gate
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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