الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > FQD4N25TM

FQD4N25TM

250V N-ch MOSFET, 2.0R RDS(on), 1.8A, DPAK TO-252

9300

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FQD4N25TM

الحزمة ： الحزمة

DPAK / TO-252-3 (6.60 x 6.10 x 2.30 mm)

الوصف

نظرة عامة على المنتج

The FQD4N25TM from onsemi is an N-channel 250V/1.8A MOSFET with 2.0 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package, designed for low-voltage switching applications.

المواصفات الرئيسية

النوع	N-Channel Enhancement MOSFET
VDSS	250 V
بطاقة الهوية	1.8 A (continuous @ TC=25°C)
RDS(تشغيل)	2.0 Ohm max @ VGS=10V
VGS(th)	2.0 to 4.0 V
Total Gate Charge	6.0 nC typical
تبديد الطاقة	25 W @ TC=25°C
درجة حرارة التشغيل	-55 درجة مئوية إلى +150 درجة مئوية
الحزمة	DPAK / TO-252-3

الميزات

250V N-ch MOSFET with 2.0 Ohm RDS(on) in DPAK surface-mount
6nC low gate charge for efficient high-voltage switching

التطبيقات

Offline SMPS primary switch and PFC boost converter

مقدمة المنتج:FQD4N25TM مقدمة المنتج

The FQD4N25TM from onsemi is a 250V N-channel enhancement-mode MOSFET designed for low-power offline switching applications. The device features 2.0 Ohm maximum on-resistance at VGS=10V and 1.8A continuous drain current in the compact DPAK (TO-252) surface-mount package. The 250V breakdown voltage makes it suitable for universal offline (85-265VAC) SMPS primary-side switching at output power levels up to approximately 30W. The 6nC total gate charge enables efficient switching at moderate frequencies (50-200kHz) with simple gate drive circuits. The DPAK package provides a good balance of thermal performance and board space, with 25W power dissipation capability at TC=25°C. The TM suffix indicates tape and reel packaging.

مبدأ العمل:FQD4N25TM مبدأ العمل

The FQD4N25TM is an N-channel enhancement-mode vertical DMOS power MOSFET. (1) N-Channel Enhancement: The device is normally off. When VGS exceeds the threshold (2.0-4.0V), an inversion layer forms under the gate oxide, creating a conduction channel between source and drain. The body diode (anode at source, cathode at drain) provides a freewheeling path for inductive loads. (2) Vertical DMOS: The vertical current flow (from drain at the bottom to source at the top) maximizes the channel density and minimizes the die area for a given RDS(on). The double-diffused MOS (DMOS) cell structure provides a short channel length for low on-resistance while maintaining adequate breakdown voltage. (3) High-Voltage Structure: The 250V breakdown voltage is achieved through a lightly-doped drain drift region that absorbs the depletion layer under high VDS. This drift region contributes to the on-resistance, hence the 2.0 Ohm RDS(on) is typical for a 250V device at this current rating.

وصف الدبوس:FQD4N25TM تعريف الدبوس ووظائفه