الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > FQD2N60TM

FQD2N60TM

600V N-ch MOSFET, 7.5R RDS(on), 0.85A, DPAK TO-252

7600

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جزء الشركة المصنعة ： جزء الشركة المصنعة

FQD2N60TM

الحزمة ： الحزمة

DPAK / TO-252-3 (6.60 x 6.10 x 2.30 mm)

الوصف

نظرة عامة على المنتج

The FQD2N60TM from onsemi is an N-channel 600V/0.85A MOSFET with 7.5 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package, suitable for universal offline SMPS primary switching.

المواصفات الرئيسية

النوع	N-Channel Enhancement MOSFET
VDSS	600 V
بطاقة الهوية	0.85 A (continuous @ TC=25°C)
RDS(تشغيل)	7.5 Ohm max @ VGS=10V
VGS(th)	2.0 to 4.0 V
Total Gate Charge	7.5 nC typical
تبديد الطاقة	20 W @ TC=25°C
درجة حرارة التشغيل	-55 درجة مئوية إلى +150 درجة مئوية
الحزمة	DPAK / TO-252-3

الميزات

600V N-ch MOSFET with 7.5 Ohm RDS(on) for universal 85-265VAC offline SMPS
DPAK surface-mount package with 7.5nC gate charge

التطبيقات

Universal offline SMPS primary switch up to 20W

مقدمة المنتج:FQD2N60TM مقدمة المنتج

The FQD2N60TM from onsemi is a 600V N-channel enhancement-mode MOSFET designed for universal offline (85-265VAC) switching power supply applications. The 600V breakdown voltage provides adequate margin for the 375V DC bus voltage derived from 265VAC input, including voltage spikes from transformer leakage inductance. The 7.5 Ohm maximum on-resistance at VGS=10V and 0.85A continuous drain current are suitable for primary-side switching in SMPS designs up to approximately 15-20W. The 7.5nC total gate charge enables efficient switching at 50-200kHz frequencies. The DPAK (TO-252) surface-mount package provides good thermal performance with 20W dissipation capability at TC=25°C. The TM suffix denotes tape and reel packaging.

مبدأ العمل:FQD2N60TM مبدأ العمل

The FQD2N60TM is a planar N-channel enhancement-mode vertical DMOS power MOSFET. (1) 600V Rating: The thick lightly-doped epitaxial drift region supports 600V drain-source voltage. This region contributes significantly to the 7.5 Ohm on-resistance, which is typical for a 600V planar MOSFET at this die size. (2) Avalanche Rating: The device is rated for single-pulse avalanche energy, providing robustness against voltage spikes from transformer leakage inductance that exceed the 600V breakdown. (3) dv/dt Immunity: The planar DMOS structure provides good dv/dt immunity, preventing parasitic bipolar turn-on during fast switching transients. The body diode recovery is relatively slow compared to SuperJunction devices, which must be considered in bridge and synchronous rectification topologies.

وصف الدبوس:FQD2N60TM تعريف الدبوس ووظائفه