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IRFB4332PBF

N-ch MOSFET, 250V, 60A, 29mOhm, TO-220AB, 175C Tj

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Manufacturer Part：

IRFB4332PBF

Package：

TO-220AB (15.6 x 4.8 mm)

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Description

Product Overview

The IRFB4332PBF from Infineon Technologies is an N-channel power MOSFET rated at 250V, 60A with 29mOhm on-resistance. Designed for PDP sustain, energy recovery, and pass switch applications, it features 175C maximum junction temperature and high repetitive peak current capability in a TO-220AB package.

Key Specifications

Type N-Channel
VDS 250 V
ID (continuous) @ 25C 60 A (Tc)
RDS(on) @ 10V 29 mOhm typ, 33 mOhm max
Gate Charge (Qg) 99 nC typical @ 10V
Input Capacitance (Ciss) 5860 pF
VGS(th) 3.0 V to 5.0 V
Avalanche Energy (EAS) 230 mJ
Power Dissipation 390 W @ 25C (Tc)
Package TO-220AB
Operating Temperature -55 to +175 C (Tj)

Features

  • Low 29mOhm RDS(on) minimizes conduction losses
  • High 60A continuous current rating
  • 175C maximum junction temperature for improved ruggedness

Applications

  • Plasma display panel sustain and energy recovery
  • Motor drive and inverter power stages
  • Switch-mode power supply primary-side switch
  • DC-DC converter high-power switching
  • Battery management system power switching

The IRFB4332PBF from Infineon Technologies is a 250V N-channel IR MOSFET power MOSFET optimized for sustain, energy recovery, and pass switch applications in plasma display panels. With a low on-resistance of 29mOhm at 10V gate drive and 60A continuous drain current, it provides efficient high-current switching. The 175C maximum junction temperature and 230mJ avalanche energy rating ensure reliable operation under demanding conditions. The TO-220AB through-hole package provides excellent thermal performance with 0.38 C/W junction-to-case thermal resistance and 390W power dissipation capability at 25C case temperature.

The IRFB4332PBF operates as a voltage-controlled N-channel enhancement-mode power MOSFET. (1) When the gate-source voltage exceeds the threshold (3.0-5.0V), the conductive channel forms between drain and source. At VGS = 10V, the channel is fully enhanced with RDS(on) = 29mOhm, providing low conduction loss. (2) During switching transitions, the gate charge (99nC typical) must be supplied or removed by the gate driver circuit. The switching speed is determined by the gate driver current capability and the MOSFET capacitances. (3) The body diode provides reverse conduction, and the avalanche capability (230mJ) protects the device during inductive energy dump events when the drain voltage exceeds the breakdown rating.

Pin Name Function
1 Gate Gate drive input
2 Drain Drain terminal (connected to tab)
3 Source Source terminal
  • Plasma display panel sustain and energy recovery switching
  • Motor drive H-bridge and three-phase inverter power stages
  • Switch-mode power supply primary-side switching element
  • DC-DC converter high-power switching with 250V blocking
  • Battery management system power switching and protection
Model Manufacturer Key Difference
IRFB4332PBF-2 Infineon Improved version
IRFP4332PBF Infineon TO-247 package variant
IRFB4310PBF Infineon 100V, lower RDS(on)
STW39NM50ND STMicroelectronics 500V, 28A, TO-247
FCH104N60F onsemi 600V, 39A, SuperFET III
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Service & Packaging

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Contact Information

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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