产品概览
The IRFB4332PBF from Infineon Technologies is an N-channel power MOSFET rated at 250V, 60A with 29mOhm on-resistance. Designed for PDP sustain, energy recovery, and pass switch applications, it features 175C maximum junction temperature and high repetitive peak current capability in a TO-220AB package.
主要规格
| 类型 | N-Channel |
| VDS | 250 V |
| ID (continuous) @ 25C | 60 A (Tc) |
| RDS(on) @ 10V | 29 mOhm typ, 33 mOhm max |
| Gate Charge (Qg) | 99 nC typical @ 10V |
| Input Capacitance (Ciss) | 5860 pF |
| VGS(th) | 3.0 V to 5.0 V |
| 雪崩能源(EAS) | 230 mJ |
| 功率耗散 | 390 W @ 25C (Tc) |
| 包装 | TO-220AB |
| 工作温度 | -55 to +175 C (Tj) |
特点
- Low 29mOhm RDS(on) minimizes conduction losses
- High 60A continuous current rating
- 175C maximum junction temperature for improved ruggedness
应用
- Plasma display panel sustain and energy recovery
- Motor drive and inverter power stages
- Switch-mode power supply primary-side switch
- DC-DC converter high-power switching
- Battery management system power switching