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IRFZ44N

55V N-ch MOSFET, 22mR RDS(on), 49A, TO-220

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Manufacturer Part：

IRFZ44N

Package：

TO-220AB (15.60 x 10.40 x 4.60 mm)

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Description

Product Overview

The IRFZ44N from Infineon (formerly International Rectifier) is a 55V N-channel power MOSFET with 0.022 Ohm RDS(on) at 10V gate drive and 49A continuous drain current in a TO-220 through-hole package.

Key Specifications

Type N-Channel Enhancement MOSFET
VDSS 55 V
ID 49 A (continuous @ TC=25°C)
RDS(on) 0.022 Ohm max @ VGS=10V
VGS(th) 2.0 to 4.0 V
Total Gate Charge 67 nC typical
Power Dissipation 131 W @ TC=25°C
Operating Temperature -55°C to +175°C
Package TO-220AB (3-pin)

Features

  • 55V N-ch MOSFET with 22mOhm RDS(on) and 49A in TO-220
  • Cost-effective industry-standard device for low-voltage switching

Applications

  • Motor drive and solenoid control at 12V/24V bus
  • Load switching and DC-DC converter at up to 55V

The IRFZ44N from Infineon is one of the most popular and cost-effective N-channel power MOSFETs, offering 55V breakdown, 22mOhm maximum on-resistance, and 49A continuous drain current in a TO-220 package. The device provides an excellent balance of low RDS(on), moderate gate charge (67nC), and low cost, making it the go-to choice for countless hobbyist and professional designs. The 55V rating is well-suited for 12V and 24V systems including automotive accessories, LED lighting, and battery-powered equipment. The N suffix denotes the improved version with lower RDS(on) than the original IRFZ44. At 49A, the conduction loss through 22mOhm is P = I2R = 492 x 0.022 = 53W, requiring adequate heatsinking for high-current operation.

The IRFZ44N is a planar N-channel enhancement-mode vertical DMOS power MOSFET. (1) Balanced Design: The 22mOhm RDS(on) at 55V represents a good balance between on-resistance and die area (cost). The device is not optimized for ultra-low RDS(on) like the IRF3205, but provides significantly better performance than older designs at a lower cost. (2) Moderate Gate Charge: The 67nC total gate charge is manageable with simple gate drive circuits (e.g., TC4420 driver), allowing switching at 50-100kHz in typical applications. (3) Body Diode: The integral body diode has a forward voltage of approximately 1.3V and moderate reverse recovery. For half-bridge and H-bridge applications, external Schottky diodes may be needed to reduce recovery losses. (4) Versatility: The combination of 55V, 49A, and 22mOhm in a low-cost TO-220 package has made this device a standard choice for motor drivers, solenoid drivers, and general-purpose switching at 12-24V.

Pin Name Function
1 G Gate
2 D Drain
3 S Source
Tab D Drain (connected to case)
  • Motor drive and solenoid control at 12V/24V with 49A capability
  • General-purpose load switching and DC-DC converter at up to 55V
Manufacturer Part Number Package Notes
Infineon IRFZ44 TO-220 Original version, higher Ron
Vishay IRLZ44N TO-220 Logic-level gate version
onsemi FDB52N20 TO-220 200V, 52A, higher voltage
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