产品概览
The NTR1P02LT1G from onsemi is a -20V P-channel enhancement-mode MOSFET with 0.80 Ohm RDS(on) at VGS=-10V, -0.4A continuous drain current, and low threshold voltage for logic-level drive in a SOT-23 package.
主要规格
| 类型 | P-Channel Enhancement MOSFET |
| VDS | -20 V |
| VGS | +/-8 V |
| 身份证(连续) | -0.4 A @ TA=25°C |
| ID (pulsed) | -1.0 A |
| RDS(on) @ VGS=-10V | 0.80 Ohm max |
| RDS(on) @ VGS=-4.5V | 1.10 Ohm max |
| VGS(th) | -0.4 to -1.0 V |
| 功率耗散 | 225 mW @ TA=25°C |
| 工作温度 | -55°C 至 +150°C |
| 包装 | SOT-23-3 |
特点
- Low 0.80 Ohm RDS(on) at -10V for efficient battery load switching
- Ultra-low threshold (VGS(th) max -1.0V) for sub-3V logic-level drive
- Compact SOT-23 package for portable and battery-powered applications
应用
- Battery load switching and power management in portable devices