Product Overview
The IPD50P04P4L-11ATMA1 from Infineon Technologies is a -50V P-channel Power MOSFET in a SOT-223 package. It features low on-resistance, logic-level gate drive, and is optimized for load switches and reverse polarity protection in automotive and industrial applications.
Key Specifications
| Channel Type | P-Channel |
| VDS (Drain-Source) | -50 V |
| VGS (Gate-Source) | ±20 V |
| RDS(on) Max | 50 mΩ @ VGS=-10V |
| ID (Continuous) | -50 A |
| Power Dissipation | 2.5 W |
| Gate Threshold | -1.0 to -2.0 V |
| Package | SOT-223 |
| Operating Temperature | -55°C to +150°C |
Features
- P-channel enhancement mode MOSFET
- Low RDS(on) of 50 mΩ for high-efficiency switching
- Logic-level gate drive compatible
Applications
- Load switches and power management
- Reverse polarity protection
- Battery management systems
- Automotive power distribution
- DC-DC converter high-side switches