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IRFB4115PBF

N-Channel MOSFET, 150V, 104A, 11 mOhm RDS(on), TO-220, StrongIRFET

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Manufacturer Part：

IRFB4115PBF

Package：

TO-220 (through-hole, 3-pin)

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Description

Product Overview

The IRFB4115PBF is a 150V N-Channel StrongIRFET power MOSFET from Infineon Technologies in a TO-220 through-hole package. It features 11 mOhm maximum RDS(on), 104A continuous drain current, and 380W power dissipation, optimized for low-frequency switching applications requiring high current and ruggedness.

Key Specifications

Channel Type N-Channel
VDS 150 V
ID (at 25C) 104 A
RDS(on) Max @ VGS=10V 11 mOhm
Qg (Typ @ 10V) 77 nC
Power Dissipation 380 W
Package TO-220 (through-hole)

Features

  • Industry standard through-hole package
  • High current rating of 104 A
  • Optimized for switching below 100 kHz
  • Softer body diode vs previous generation
  • Halogen-free and RoHS compliant

Applications

  • DC motor drives and controllers
  • Battery management systems (BMS)
  • Inverters for industrial and automotive
  • DC-DC converters

The IRFB4115PBF is a 150V N-Channel StrongIRFET power MOSFET from Infineon Technologies, optimized for low RDS(on) and high current capability. With 11 mOhm maximum on-resistance and 104 A continuous drain current rating, this device is ideal for low-frequency switching applications that demand high performance and ruggedness. The StrongIRFET family provides a softer body diode compared to previous generations, reducing reverse recovery losses. Packaged in the industry-standard TO-220, it serves as a drop-in replacement for existing designs.

The IRFB4115PBF operates as a voltage-controlled switch. When a positive gate-source voltage exceeding the threshold is applied, an inversion layer forms in the N-channel, allowing current to flow from drain to source. The low RDS(on) of 11 mOhm minimizes conduction losses at high currents. The device features an integral body diode that conducts when the drain-source voltage is reversed, providing a freewheeling path for inductive loads. The trench MOSFET technology enables low gate charge for efficient switching.

Pin Name Type Function
1 G (Gate) Input Gate control terminal
2 D (Drain) Output Drain terminal (tab/heatsink)
3 S (Source) Power Source terminal
  • DC motor drive circuits for forklifts and LEVs
  • Battery management systems and EV chargers
  • Inverter stages for industrial UPS
  • High-current DC-DC converters
  • Power tools and gardening equipment
Manufacturer Part Number Package Notes
Infineon IRFB4110PBF TO-220 100V, lower RDS(on)
Infineon IRFS4115TRLPBF D2-Pak SMD equivalent
onsemi FDBL86361_F085 TO-220 60V, very low RDS(on)
STMicroelectronics STW88N150 TO-247 150V, higher power option
Infineon IRFB4127PBF TO-220 200V, higher voltage option
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Tel / WhatsApp: +86 13760382860

Service & Packaging

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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