IRFB4115PBF

The IRFB4115PBF from Infineon Technologies is a 150 V N-channel StrongIRFET power MOSFET designed for low-frequency applications requiring high current capability and low on-resistance. Part of the StrongIRFET family optimized for low RDS(on) and high current, this device features a typical RDS(on) of just 9.3 mΩ at VGS = 10 V and a continuous drain current rating of 104 A at 25°C. The TO-220AB package provides a proven through-hole mounting solution with excellent thermal performance (RθJC = 0.4 °C/W). The device also features 830 mJ single-pulse avalanche energy rating, enhanced body diode dv/dt and di/dt capability, and full capacitance and avalanche SOA characterization.

The IRFB4115PBF operates as a voltage-controlled N-channel enhancement-mode MOSFET. When VGS exceeds the threshold voltage (3.0-5.0 V), an inversion layer forms in the P-body region, creating an N-type channel between source and drain that allows current flow. The Trench MOSFET gate structure provides a high channel density, resulting in the ultra-low RDS(on) of 9.3 mΩ. The internal body diode (from source to drain) provides a natural freewheeling path for inductive loads. The device’s improved body diode exhibits softer reverse recovery characteristics compared to previous generation HEXFETs, reducing voltage spikes and ringing during switching transitions. The high avalanche energy rating (830 mJ) indicates the device can absorb significant energy during unclamped inductive switching events without failure.

• UPS systems: Primary switching element in offline and high-frequency transformer-based uninterruptible power supplies
• Battery management: High-current switching in EV battery pack management and charging systems
• DC-DC converters: Synchronous rectification in high-current buck/boost converters for industrial power supplies
• Motor drives: Low-frequency motor control in industrial automation equipment
• Power tools: High-current switching for cordless power tool motor drives and battery protection