Product Overview
The IRF9Z24NPBF from Infineon Technologies (formerly International Rectifier) is a P-channel HEXFET power MOSFET rated at -55 V drain-source voltage and -12 A continuous drain current. Packaged in a TO-220AB through-hole package, it features an on-resistance of 0.175 Ohm at VGS = -10 V. The device is fully avalanche rated for rugged switching applications.
Key Specifications
| Polarity | P-Channel |
| VDS (Drain-Source Voltage) | -55 V |
| ID (Continuous Drain Current) | -12 A (TC=25°C) |
| RDS(on) | 0.175 Ohm @ VGS=-10V |
| VGS(th) (Threshold Voltage) | -2.0 to -4.0 V |
| Qg (Total Gate Charge) | 19 nC @ VGS=-10V |
| Power Dissipation | 45 W (TC=25°C) |
| dv/dt Rating | 5.0 V/ns |
| Operating Temperature | -55°C to +175°C |
| Package | TO-220AB |
Features
- Advanced process technology for low RDS(on)
- Dynamic dv/dt rating
- 175°C operating temperature capability
- Fully avalanche rated
- Fast switching speed
- Fifth generation HEXFET technology
Applications
- Switch-mode power supplies (high-side switching)
- Motor drive and H-bridge circuits
- Battery management and load switching