IRF9Z24NPBF


P-Channel power MOSFET, -55V, -12A, 0.175 Ohm RDS(on), TO-220AB, fully avalanche rated

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Manufacturer Part:

IRF9Z24NPBF

Package:

TO-220AB (10.54 x 4.69 x 19.30 mm, 3 pins + tab)

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Description

Product Overview

The IRF9Z24NPBF from Infineon Technologies (formerly International Rectifier) is a P-channel HEXFET power MOSFET rated at -55 V drain-source voltage and -12 A continuous drain current. Packaged in a TO-220AB through-hole package, it features an on-resistance of 0.175 Ohm at VGS = -10 V. The device is fully avalanche rated for rugged switching applications.

Key Specifications

Polarity P-Channel
VDS (Drain-Source Voltage) -55 V
ID (Continuous Drain Current) -12 A (TC=25°C)
RDS(on) 0.175 Ohm @ VGS=-10V
VGS(th) (Threshold Voltage) -2.0 to -4.0 V
Qg (Total Gate Charge) 19 nC @ VGS=-10V
Power Dissipation 45 W (TC=25°C)
dv/dt Rating 5.0 V/ns
Operating Temperature -55°C to +175°C
Package TO-220AB

Features

  • Advanced process technology for low RDS(on)
  • Dynamic dv/dt rating
  • 175°C operating temperature capability
  • Fully avalanche rated
  • Fast switching speed
  • Fifth generation HEXFET technology

Applications

  • Switch-mode power supplies (high-side switching)
  • Motor drive and H-bridge circuits
  • Battery management and load switching
  • DC-DC converters Automotive power systems

The IRF9Z24NPBF is a P-channel HEXFET power MOSFET from Infineon Technologies, designed using fifth-generation advanced processing techniques to achieve extremely low on-resistance per silicon area. With a drain-source voltage rating of -55 V and continuous drain current of -12 A, the device is well-suited for high-side switching applications. The TO-220AB package provides excellent thermal performance with a junction-to-case thermal resistance of 3.3°C/W, enabling power dissipation up to 45 W at 25°C case temperature. The device is fully avalanche rated, providing robustness in unclamped inductive switching scenarios.

As a P-channel enhancement-mode MOSFET, the IRF9Z24NPBF conducts when the gate-to-source voltage is driven negative below the threshold voltage (typically -2 to -4 V). Current flows from source to drain through the P-type channel formed beneath the gate oxide. The low RDS(on) of 0.175 Ohm minimizes conduction losses during the on-state. During switching transitions, the gate charge (19 nC) must be supplied or removed to charge/discharge the input capacitance (350 pF). The integral body diode provides a reverse conduction path and can handle repetitive avalanche energy, making the device suitable for inductive load switching. The maximum dv/dt rating of 5.0 V/ns prevents parasitic turn-on during fast transitions.

Pin Name Type Function
1 Gate Input MOSFET gate control
2 Drain Output Drain terminal (connected to tab)
3 Source Power Source terminal
Tab Drain Output Drain (connected to pin 2)
  • High-side load switches in battery-powered devices
  • H-bridge motor drive circuits (P-channel upper leg)
  • Reverse polarity protection circuits
  • DC-DC buck-boost converter output stages
  • Automotive body electronics and lighting control
Manufacturer Part Number Package Notes
Infineon IRF9Z24NS D2PAK SMD version
Vishay IRF9Z24NPBF TO-220AB Second source equivalent
Infineon IRF9Z34NPBF TO-220AB Higher current (-18A), lower RDS(on)
onsemi FQP27P06 TO-220 -60V, -27A alternative
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We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.

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All electronic components we source from our partnered supply chains go through strict incoming inspections.Through careful testing, we ensure everything delivered to customers is genuine original parts and meets quality requirements.In addition, we keep complete inspection records to make the entire supply chain process clear and traceable.

Certification
We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.

Service & Packaging

All electronic components we source from our partnered supply chains go through strict incoming inspections.Through careful testing, we ensure everything delivered to customers is genuine original parts and meets quality requirements.In addition, we keep complete inspection records to make the entire supply chain process clear and traceable.

Certification
We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.