IRF9Z24NPBF

The IRF9Z24NPBF is a P-channel HEXFET power MOSFET from Infineon Technologies, designed using fifth-generation advanced processing techniques to achieve extremely low on-resistance per silicon area. With a drain-source voltage rating of -55 V and continuous drain current of -12 A, the device is well-suited for high-side switching applications. The TO-220AB package provides excellent thermal performance with a junction-to-case thermal resistance of 3.3°C/W, enabling power dissipation up to 45 W at 25°C case temperature. The device is fully avalanche rated, providing robustness in unclamped inductive switching scenarios.

As a P-channel enhancement-mode MOSFET, the IRF9Z24NPBF conducts when the gate-to-source voltage is driven negative below the threshold voltage (typically -2 to -4 V). Current flows from source to drain through the P-type channel formed beneath the gate oxide. The low RDS(on) of 0.175 Ohm minimizes conduction losses during the on-state. During switching transitions, the gate charge (19 nC) must be supplied or removed to charge/discharge the input capacitance (350 pF). The integral body diode provides a reverse conduction path and can handle repetitive avalanche energy, making the device suitable for inductive load switching. The maximum dv/dt rating of 5.0 V/ns prevents parasitic turn-on during fast transitions.

• High-side load switches in battery-powered devices
• H-bridge motor drive circuits (P-channel upper leg)
• Reverse polarity protection circuits
• DC-DC buck-boost converter output stages
• Automotive body electronics and lighting control