产品概览
The IRFB260NPBF from Infineon is a 200V N-channel power MOSFET with 50A drain current and 18mOhm RDS(on) in a TO-220 package, designed for high-efficiency switching applications.
主要规格
| 类型 | N-Channel Enhancement MOSFET |
| VDS | 200V |
| VGS | +/-30V |
| ID (Continuous) | 50A (TC=25C) |
| RDS(on) @ 10V | 18 mOhm (max) |
| VGS(th) | 2-4V |
| Qg (Total Gate Charge) | 120 nC (typ) |
| 西斯 | 3900 pF (typ) |
| 功率耗散 | 250W (TC=25C) |
| 包装 | TO-220AB (through-hole) |
| 工作温度 | -55 to +175 C (TJ) |
特点
- 200V drain-source voltage rating
- Ultra-low 18mOhm RDS(on) at VGS=10V
- 50A continuous drain current
- 250W power dissipation capability
- Low gate charge for fast switching
- Pb-free lead finish
应用
- Motor drive and control
- Switching power supplies
- DC-DC converters (48V systems)
- UPS and inverter systems
- Battery management