产品概览
The IRF640N from Infineon Technologies is an N-channel power MOSFET rated at 200V and 18A with 150mOhm on-resistance. Packaged in TO-220AB, it is widely used in switching power supplies, motor drives, and DC-DC converters requiring 200V breakdown voltage.
主要规格
| 类型 | N-channel Enhancement MOSFET |
| VDS | 200V |
| 身份证(连续) | 18A (at TC=25C) |
| RDS(on) | 150mOhm (max at VGS=10V) |
| VGS(th) | 2.0V to 4.0V |
| 功率耗散 | 79W (at TC=25C) |
| Total Gate Charge | 40nC (typ) |
| 包装 | TO-220AB |
| 工作温度 | -55 to +175 C |
特点
- 200V drain-source voltage rating
- 150mOhm maximum on-resistance
- 18A continuous drain current
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Low gate charge: 40nC typical
应用
- Switching power supply primary-side switch
- Motor drive and DC-DC converters
- Class-D audio amplifiers
- Automotive power switching