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IRF640N

N-channel 200V 18A power MOSFET, 150mOhm Ron, 40nC Qg, TO-220

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Manufacturer Part：

IRF640N

Package：

TO-220AB

Brand：
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Description

Product Overview

The IRF640N from Infineon Technologies is an N-channel power MOSFET rated at 200V and 18A with 150mOhm on-resistance. Packaged in TO-220AB, it is widely used in switching power supplies, motor drives, and DC-DC converters requiring 200V breakdown voltage.

Key Specifications

Type N-channel Enhancement MOSFET
VDS 200V
ID (continuous) 18A (at TC=25C)
RDS(on) 150mOhm (max at VGS=10V)
VGS(th) 2.0V to 4.0V
Power Dissipation 79W (at TC=25C)
Total Gate Charge 40nC (typ)
Package TO-220AB
Operating Temperature -55 to +175 C

Features

  • 200V drain-source voltage rating
  • 150mOhm maximum on-resistance
  • 18A continuous drain current
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Low gate charge: 40nC typical

Applications

  • Switching power supply primary-side switch
  • Motor drive and DC-DC converters
  • Class-D audio amplifiers
  • Automotive power switching

The IRF640N from Infineon Technologies is an N-channel enhancement-mode power MOSFET rated at 200V and 18A with maximum on-resistance of 150mOhm. The 200V rating makes it suitable for offline switching power supply primary-side switches, 48V DC-DC converters, and motor drive applications. The moderate gate charge of 40nC enables reasonably fast switching without excessive gate drive power. The TO-220AB package provides 79W power dissipation capability with proper heatsink mounting. Repetitive avalanche rating ensures reliability during inductive switching transients. The IRF640N is one of the most widely stocked 200V MOSFETs, ensuring long-term availability for production designs.

The IRF640N uses a vertical DMOS structure with planar gate technology. The N-channel is formed by applying a positive gate-source voltage above the threshold (2-4V), creating an inversion layer under the gate oxide. At VGS=10V, the channel is fully enhanced with RDS(on) of 150mOhm. The vertical structure features many parallel cell structures that share the drain current, reducing on-resistance. The body diode between source and drain provides a natural freewheeling path with a reverse recovery time of approximately 200ns. The 40nC gate charge represents the total charge that must be delivered to the gate to switch the device on, determining the required gate drive current for a given switching speed.

Pin Name Function
1 Gate Gate control input
2 Drain Drain terminal (connected to tab)
3 Source Source terminal
  • Switching power supply primary-side switch at 200V rating
  • 48V DC-DC converter power stage with 18A current capability
  • Motor drive half-bridge with 200V breakdown for 48V motor systems
  • Class-D audio amplifier output stage with 150mOhm conduction loss
Model Manufacturer Key Difference
IRF640NPbF Infineon Lead-free version
IRF740 Infineon 400V, 10A, higher voltage
FQA19N60 onsemi 600V, 19A, super-junction
IRF840 Infineon 500V, 8A, classic high-voltage
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Contact Information

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Service & Packaging

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Contact Information

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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