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IRFZ44N

N-ch MOSFET, 55V, 49A, 17.5mΩ, TO-220

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Manufacturer Part：

IRFZ44N

Package：

TO-220AB (10.4×9.0×4.6 mm, through-hole)

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Description

Product Overview

The IRFZ44N is an N-channel power MOSFET from Infineon Technologies (originally International Rectifier). It features a 55V drain-source voltage rating and 49A continuous drain current with very low on-resistance of 17.5 mΩ. Packaged in a through-hole TO-220, it is widely used for switching and motor drive applications requiring high current handling and low conduction losses.

Key Specifications

Type N-Channel MOSFET
VDS (Drain-Source Voltage) 55V
VGS (Gate-Source Voltage) ±20V
ID (Continuous Drain Current) 49A
RDS(ON) 17.5 mΩ (typical at VGS=10V)
Gate Threshold Voltage 2.0V to 4.0V
Gate Charge 65 nC (typical)
Power Dissipation 110W (at TC=25°C)
Rise Time 60 ns (typical)
Operating Temperature -55°C to +175°C (junction)
Package TO-220AB

Features

  • Ultra-low on-resistance: 17.5 mΩ for minimal conduction losses
  • High current capability: 49A continuous
  • Logic-level gate threshold (2-4V) for direct MCU drive
  • Fast switching with low gate charge
  • Avalanche rated for ruggedness in inductive loads
  • TO-220 through-hole package for easy prototyping and heatsink mounting
  • Industry-standard pinout (G-D-S left to right, front view)

Applications

  • Motor drive and speed control (DC motors, BLDC)
  • Power switching and load control
  • Battery management and protection
  • Solar charge controller power stage
  • Inverter and converter power stages

The IRFZ44N from Infineon Technologies is an N-channel power MOSFET rated at 55V/49A with an ultra-low on-resistance of 17.5 mΩ. Designed for high-efficiency switching applications, it features a logic-level gate threshold (2-4V) enabling direct drive from 5V microcontrollers. The TO-220 package supports heatsink mounting for high-power applications including motor drives, power switching, and battery management systems.

The IRFZ44N is a vertical power MOSFET using a DMOS (Double-diffused MOS) structure. When a positive gate-source voltage exceeds the threshold (2-4V), an inversion layer forms in the P-body region, creating a conductive channel between drain and source. The very low RDS(ON) of 17.5 mΩ is achieved through a dense cell structure that provides many parallel conduction paths. The device is fully enhanced at VGS=10V for minimum on-resistance. The body-drain diode provides inherent reverse conduction for inductive load applications. Avalanche rating ensures the device can absorb energy from inductive kickback without external protection.

Pin Name Type Function
1 Gate Input MOSFET gate (drive with 5-10V for full enhancement)
2 Drain Output MOSFET drain (connects to load)
3 Source Power MOSFET source (connects to ground, tab connected)
  • DC motor drive and PWM speed control circuits
  • High-current power switching and load control up to 49A
  • Battery management system switching and protection
  • Solar charge controller power stage
  • Inverter half-bridge and full-bridge power stages
Manufacturer Part Number Package Notes
Infineon IRFZ44NPbF TO-220 Lead-free version
Infineon IRFZ48N TO-220 60V, 64A, higher rating
Vishay IRLZ44N TO-220 Logic-level gate, 5V drive optimized
STMicroelectronics STP55NF06L TO-220 60V, 50A, logic-level
ON Semiconductor FDP55N06 TO-220 60V, 50A, similar specs
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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