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IRFB260NPBF

200V N-ch MOSFET, 50A, 18mOhm, TO-220, high-efficiency switching

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Manufacturer Part：

IRFB260NPBF

Package：

TO-220AB (15.6 x 10.4 x 4.6 mm, through-hole, 3 leads + tab)

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Description

Product Overview

The IRFB260NPBF from Infineon is a 200V N-channel power MOSFET with 50A drain current and 18mOhm RDS(on) in a TO-220 package, designed for high-efficiency switching applications.

Key Specifications

Type N-Channel Enhancement MOSFET
VDS 200V
VGS +/-30V
ID (Continuous) 50A (TC=25C)
RDS(on) @ 10V 18 mOhm (max)
VGS(th) 2-4V
Qg (Total Gate Charge) 120 nC (typ)
Ciss 3900 pF (typ)
Power Dissipation 250W (TC=25C)
Package TO-220AB (through-hole)
Operating Temperature -55 to +175 C (TJ)

Features

  • 200V drain-source voltage rating
  • Ultra-low 18mOhm RDS(on) at VGS=10V
  • 50A continuous drain current
  • 250W power dissipation capability
  • Low gate charge for fast switching
  • Pb-free lead finish

Applications

  • Motor drive and control
  • Switching power supplies
  • DC-DC converters (48V systems)
  • UPS and inverter systems
  • Battery management

The IRFB260NPBF from Infineon (formerly International Rectifier) is a 200V N-channel power MOSFET with ultra-low on-resistance of 18mOhm maximum at VGS=10V, making it one of the lowest RDS(on) devices available in the 200V TO-220 class. The 50A continuous drain current rating and 250W power dissipation capability (with proper heatsinking) make this device suitable for demanding power switching applications in motor drives, power supplies, and converters. The 200V rating provides adequate voltage margin for 48V battery systems, telecom rectifiers (48V nominal), and UPS inverter stages. At 18mOhm RDS(on), conduction losses are dramatically lower than earlier-generation 200V MOSFETs (which typically had 40-80mOhm RDS(on)), enabling higher efficiency or eliminating the need for parallel MOSFET configurations. The total gate charge of 120nC is relatively low for a device of this current rating, allowing reasonable switching speeds with standard gate drivers. The TO-220 through-hole package provides excellent thermal performance with a junction-to-case thermal resistance that supports the full 250W rating when mounted on an appropriate heatsink. The IRFB260NPBF is commonly used in half-bridge and full-bridge motor drive stages, synchronous buck converters for 48V-to-point-of-load, and as the primary switch in forward or flyback converters.

The IRFB260NPBF operates as a voltage-controlled N-channel enhancement-mode power MOSFET. Key operating principles include: (1) Enhancement-Mode Operation – the device is OFF when VGS=0V; applying VGS above the threshold (2-4V) creates a conductive channel; at VGS=10V, the channel is fully enhanced with RDS(on)=18mOhm max; (2) Vertical DMOS Structure – current flows vertically from drain (substrate) through the epitaxial drift region and channel to the source; the 200V blocking capability is achieved through a carefully optimized epitaxial layer thickness and doping that balances RDS(on) against breakdown voltage; (3) Low RDS(on) Design – the ultra-low 18mOhm is achieved through advanced cell density optimization and stripe-cell geometry that maximizes channel width per unit die area; the tradeoff is higher input capacitance (Ciss=3900pF) and gate charge (Qg=120nC) compared to lower-current devices; (4) Switching Performance – the Qg=120nC determines the gate drive energy; with a 2A gate driver, the MOSFET can switch in approximately 60ns; for high-frequency applications (>200kHz), a stronger gate driver may be needed to minimize switching losses; (5) Body Diode – the intrinsic body diode (source-to-drain PN junction) has a forward voltage of approximately 1.2V and reverse recovery time of several hundred nanoseconds; in motor drive applications, an external Schottky diode in parallel may be needed if fast body diode recovery is required.

Pin Name Function
1 Gate Gate terminal (drive 10V for minimum RDS(on))
2 Drain Drain terminal (connected to tab)
3 Source Source terminal
Tab Drain Drain connection (electrically connected to pin 2)
  • 48V motor drive: half-bridge with 2x IRFB260N for 48V BLDC motor at 30A with low conduction loss
  • 48V-12V DC-DC: primary switch in 48V telecom bus converter at 200kHz, 18mOhm minimizes conduction loss
  • UPS inverter: full-bridge with 4x IRFB260N for 48V battery to 230V AC inverter
  • Battery protection: high-current disconnect switch for 48V Li-Ion battery pack at 50A
Manufacturer Part Number Package Notes
Infineon IRFB260MPBF TO-220 Similar device, different grade
Infineon IRFB4110PBF TO-220 100V/180A, lower voltage higher current
onsemi FCH104N60F TO-247 600V/10A, higher voltage
Infineon IPP200N25N3G TO-247 250V/80A/20mOhm, SuperJunction
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