产品概览
The IPW60R190C6 from Infineon Technologies is a 600 V CoolMOS N-channel superjunction power MOSFET with 190 mOhm on-resistance in a TO-247 package. It features Infineon’s 6th generation CoolMOS technology offering improved RDS(on) x area figure of merit, excellent switching performance, and high ruggedness for hard-switching and resonant topologies.
主要规格
| 类型 | N-Channel CoolMOS Superjunction MOSFET |
| VDS | 600 V |
| VGS | ±20 V |
| RDS(on) (VGS=10V) | 190 mOhm (max) |
| Continuous Drain Current (TC=25°C) | 20.7 A |
| Gate Threshold Voltage | 3.0-5.0 V |
| Total Gate Charge | 47 nC (typical) |
| Effective Output Charge | 6.7 nC |
| Energy Spec (Eoss) | 8 µJ (typical at 400V) |
| Power Dissipation (TC=25°C) | 250 W |
| dv/dt Robustness | 50 V/ns |
| 包装 | TO-247 |
| 工作温度 | -55°C to 150°C |
特点
- 6th generation CoolMOS superjunction technology
- 190 mOhm RDS(on) with low gate charge (47 nC)
- Excellent RDS(on) x area figure of merit
- Very low effective output charge (Eoss)
- High dv/dt ruggedness: 50 V/ns
- Qualified for industrial applications
- Optimized for hard-switching and resonant topologies
- Zener diode integrated for ESD gate protection
应用
- Switch-mode power supplies (SMPS) primary side
- Power factor correction (PFC) stages
- LLC and phase-shifted full-bridge converters
- Solar inverters and motor drives
- UPS systems and EV charging stations