产品概览
The IRLR2905ZTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® power MOSFET in a DPAK (TO-252) surface-mount package. It features a 55V drain-source voltage rating, 42A continuous drain current at 25°C, and low 13.5mΩ maximum on-resistance at VGS=10V. The logic-level gate threshold (1-3V) enables direct drive from 5V microcontrollers.
主要规格
| Drain-Source Voltage (VDSS) | 55V |
| Continuous Drain Current (ID) | 42A @ TC=25°C (Package Limited: 60A) |
| RDS(ON) @ VGS=10V | 11mΩ (Typ), 13.5mΩ (Max) |
| RDS(ON) @ VGS=4.5V | 22.5mΩ (Max) |
| Gate Threshold (VGS(th)) | 1.0V ~ 3.0V |
| Total Gate Charge (Qg) | 23nC (Typ) @ VGS=5V |
| 功率耗散 (PD) | 110W @ TC=25°C |
| 包装 | DPAK / TO-252-3 (6.73 x 6.22mm) |
| 工作温度 | -55°C ~ +175°C |
特点
- Ultra-low RDS(ON) of 11mΩ typical at VGS=10V
- Logic-level gate drive compatible with 5V microcontrollers
- Low gate charge of 23nC for efficient switching
- Avalanche rated for ruggedness in inductive loads
- 100% avalanche tested for reliability
- Lead-free (Pb-free) construction (TRPBF suffix)
应用
- DC-DC converter synchronous rectification
- Motor drive and control
- Battery management and protection
- Load switching and power distribution
- Automotive electronics