产品概览
The BAS416 from Nexperia is a low-leakage switching diode with 3 pA typical reverse current, 75 V reverse voltage, and 0.8 us typical reverse recovery time in an SOD-323 surface mount package.
主要规格
| 类型 | Low-Leakage Switching Diode |
| Reverse Voltage (VR) | 75 V (continuous) |
| Peak Reverse Voltage (VRRM) | 85 V |
| Forward Current (IF) | 200 mA (continuous) |
| Forward Voltage (VF) | 1.0 V (max) @ IF=10mA |
| Reverse Current (IR) | 3 pA (typ) @ VR=75V, 25C |
| Reverse Recovery Time (trr) | 0.8 us (typical) |
| Junction Capacitance (Cd) | 2 pF @ VR=0V, 1MHz |
| 包装 | SOD-323 (1.7 x 1.25 x 0.95 mm) |
| 工作温度 | -65C to +150C (TJ) |
| Marking Code | D4 |
特点
- Ultra-low 3 pA typical leakage current
- 75 V continuous reverse voltage rating
- 0.8 us typical reverse recovery time
- Low 2 pF junction capacitance
- Compact SOD-323 package
- Epitaxial planar construction
应用
- Low-leakage signal clamping
- High-impedance input protection
- Sensitive measurement circuit switching
- Photodiode amplifier leakage prevention