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LM358BAIDR

Dual GP Op-Amp, 1.2MHz GBW, 3-32V, EMI Hardened, SOIC-8, -40~125C

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Pieza del fabricante：

LM358BAIDR

Paquete：

SOIC-8 (4.9 x 3.9 x 1.5 mm)

Marca：
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Descripción

Productos

The LM358BAIDR from Texas Instruments is a dual general-purpose operational amplifier with 1.2 MHz GBW, 3 V to 32 V supply range, and EMI hardened inputs in an SOIC-8 package rated for -40C to 125C.

Especificaciones

Tipo Dual General-Purpose Op-Amp
Canales 2
Tensión de alimentación 3 V to 32 V (single) or +/-1.5 V to +/-16 V
Producto ganancia-ancho de banda 1.2 MHz
Velocidad de giro 0.5 V/us
Tensión de offset de entrada 1 mV (typical)
Corriente de polarización de entrada 10 nA (typical)
Supply Current 0.5 mA (typical per channel)
EMI Hardened Yes (B-version)
Paquete SOIC-8
Temperatura de funcionamiento -40C to 125C

Características

  • EMI hardened inputs reduce RF rectification effects
  • 1.2 MHz gain-bandwidth product
  • 3 V to 32 V wide supply range
  • Low input bias current (10 nA typical)
  • Input common-mode range includes ground
  • Industry-standard LM358 pinout

Aplicaciones

  • Industrial sensor signal conditioning
  • Active filters and integrators
  • Current sensing and voltage monitoring
  • Battery-powered instrumentation
  • Automotive body electronics

The LM358BAIDR from Texas Instruments is an enhanced version of the classic LM358 dual operational amplifier with EMI-hardened inputs and automotive temperature range. The B-version incorporates internal EMI filtering structures that reduce the susceptibility to RF interference and the resulting DC offset shifts caused by RF rectification in the input stage. The 1.2 MHz GBW and 0.5 V/us slew rate suit general-purpose signal conditioning and active filter applications. The wide 3 V to 32 V single-supply range and input common-mode range that includes ground make the device easy to use in single-supply circuits. The -40C to 125C temperature range supports automotive and industrial environments.

The LM358BAIDR uses a bipolar input stage with PNP differential pair transistors. The PNP input structure allows the common-mode input range to extend to ground (0 V), enabling true single-supply operation. The EMI-hardened version adds internal low-pass filtering (RC networks) at the input stage that attenuates high-frequency RF signals before they reach the sensitive differential pair. This prevents RF signals from being rectified by the non-linear input junctions, which would otherwise cause DC offset shifts and output errors. The output stage uses a class AB push-pull configuration that can both source and sink current, though the sink capability is limited. The internal compensation capacitor provides unity gain stability without external components.

Pin Nombre Tipo Función
1 1OUT Salida Channel 1 output
2 1IN- Entrada Channel 1 inverting input
3 1IN+ Entrada Channel 1 non-inverting input
4 GND Potencia Ground / negative supply
5 2IN+ Entrada Channel 2 non-inverting input
6 2IN- Entrada Channel 2 inverting input
7 2OUT Salida Channel 2 output
8 V+ Potencia Positive supply (3-32V)
  • Industrial 4-20mA current loop receiver and transmitter
  • Battery-powered sensor amplifier with single supply
  • Automotive body control module signal conditioning
  • Low-side current sensing amplifier for power management
  • Active filter and integrator in control systems
Fabricante Número de pieza Paquete Notas
TI LM358BIDR SOIC-8 0-70C commercial grade
TI LM2904BIDR SOIC-8 Automotive grade, same die
STMicroelectronics LM358DT SOIC-8 Standard LM358, no EMI filter
onsemi LM358DR2G SOIC-8 Standard LM358 compatible
Microchip MCP6002-I/SN SOIC-8 CMOS, RRIO, 1.8-5.5V, 1MHz
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