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SIRA18ADP-T1-GE3

30V N-Ch TrenchFET, 9.3mOhm @4.5V, 28A, PowerPAK 1212-8S

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Pieza del fabricante：

SIRA18ADP-T1-GE3

Paquete：

PowerPAK 1212-8S (3.3 x 3.3 x 0.8 mm, exposed pad)

Marca：
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Descripción

Productos

The SIRA18ADP-T1-GE3 from Vishay is a 30 V, N-channel enhancement mode TrenchFET power MOSFET with 9.3 mOhm RDS(on) at VGS=4.5V in a PowerPAK 1212-8S package, optimized for low-voltage power switching.

Especificaciones

Tipo N-Channel TrenchFET Power MOSFET
VDS 30 V
RDS(on) @ VGS=4.5V 9.3 mOhm (max)
RDS(on) @ VGS=2.5V 14.5 mOhm (max)
ID 28 A @ TC=25C
VGS(th) 0.65 V to 1.45 V
Total Gate Charge (Qg) 16 nC (typical)
Power Dissipation 34 W @ TC=25C
Paquete PowerPAK 1212-8S (3.3 x 3.3 mm)
Temperatura de funcionamiento -55C to 150C

Características

  • Ultra-low 9.3 mOhm RDS(on) at VGS=4.5V
  • Logic-level gate drive compatible (4.5V)
  • Low 16 nC total gate charge
  • 30 V rating for battery-powered systems
  • PowerPAK 1212-8S with excellent thermal resistance

Aplicaciones

  • Battery-powered load switches and disconnects
  • DC-DC converter synchronous rectifier
  • Motor drive and H-bridge low-side
  • Hot-swap and inrush current limiting

The SIRA18ADP-T1-GE3 from Vishay is a 30 V N-channel TrenchFET power MOSFET with ultra-low 9.3 mOhm RDS(on) at VGS=4.5V in a PowerPAK 1212-8S package. The logic-level gate drive (fully enhanced at 4.5V) allows direct interface with 3.3V/5V MCU GPIOs without gate driver circuitry. The 16 nC total gate charge enables efficient switching at moderate frequencies. The PowerPAK 1212-8S package provides excellent thermal performance with its exposed drain pad, supporting 34 W power dissipation. This device is ideal for battery-powered load switching and synchronous rectification in portable electronics.

The SIRA18ADP-T1-GE3 uses Vishay TrenchFET technology where vertical trenches are etched into the silicon and filled with gate oxide and polysilicon gate material. This trench gate structure provides high channel density and eliminates the JFET region present in planar MOSFETs, resulting in significantly lower RDS(on) per unit area. When VGS exceeds the threshold (0.65-1.45V), an inversion layer forms along the trench sidewalls, creating conduction channels between the source and drain. The low 9.3 mOhm RDS(on) at VGS=4.5V is achieved through advanced cell design and optimized trench geometry. The logic-level gate means the device is fully enhanced at 4.5V VGS, making it compatible with 3.3V/5V logic without additional gate drive voltage. The low Qg (16 nC) minimizes gate drive power loss at switching frequencies up to several hundred kHz.

Pin Nombre Tipo Función
1 Fuente Potencia Source terminal
2 Puerta Entrada Gate drive input
3 Fuente Potencia Source terminal
4-8 Drenaje Potencia Drain terminals
Tampón Drenaje Potencia Exposed thermal pad (drain)
  • Portable device battery load switch with 3.3V MCU control
  • Synchronous buck converter low-side MOSFET
  • Motor drive H-bridge low-side leg
  • Hot-swap and inrush current limiting in server blades
  • USB PD port power routing and protection
Fabricante Número de pieza Paquete Notas
Vishay SIRA14DP-T1-GE3 PowerPAK 1212-8 20V, lower RDS(on)
Infineon BSZ097N06LS5ATMA1 PQFN-8 60V, 9.7mOhm, higher voltage
onsemi NTMFS4C05N PQFN-5×6 30V, 5.4mOhm, larger package
Texas Instruments CSD17579Q5A SON-5 30V, 9.6mOhm, power block
AOS AON6260E DFN-8 30V, 8.5mOhm, similar class
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