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BC856BS

Dual PNP Transistor, -65V, -100mA, hFE 125-630, SOT363

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Pieza del fabricante：

BC856BS

Paquete：

SOT363 (SC-88, 2.1 x 1.25 x 0.95 mm)

Marca：
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Descripción

Productos

The BC856BS from Nexperia is a dual PNP general-purpose transistor pair in a SOT363 (SC-88) package, rated at 65 V VCEO and 100 mA IC per transistor, matched for current mirror and differential pair applications.

Especificaciones

Tipo Dual PNP General-Purpose Transistor
Configuración Dual, common emitter
VCEO -65 V
IC (Collector Current) -100 mA (per transistor)
hFE (Current Gain) 125 to 630 (BC856B grade)
FT (Transition Frequency) 100 MHz
Power Dissipation 330 mW (total)
Paquete SOT363 (SC-88, 2.1 x 1.25 mm)
Temperatura de funcionamiento -55C to +150C

Características

  • Dual matched PNP transistor pair in one package
  • 65 V collector-emitter voltage rating
  • 100 mA collector current per transistor
  • High hFE (125-630 for B suffix)
  • Ultra-small SOT363 footprint

Aplicaciones

  • Current mirror circuits
  • Differential amplifier input pairs
  • Temperature-compensated bias networks
  • General-purpose switching and amplification
  • Signal routing and multiplexing

The BC856BS from Nexperia is a dual PNP general-purpose transistor in an ultra-compact SOT363 (SC-88) package. The two transistors are fabricated on the same die, ensuring close matching of parameters such as hFE and VBE, which is critical for current mirror and differential pair applications. The -65 V VCEO and -100 mA IC ratings make the device suitable for a wide range of analog signal processing and general-purpose switching applications. The B suffix indicates hFE range of 125-630. The tiny SOT363 footprint (2.1 x 1.25 mm) enables high-density PCB layouts.

The BC856BS contains two PNP bipolar junction transistors (BJTs) fabricated on the same silicon die. Each transistor has three semiconductor layers (P-N-P) forming two P-N junctions: the base-emitter junction and the base-collector junction. In normal active operation, the base-emitter junction is forward-biased and the base-collector junction is reverse-biased. Current flowing into the base (conventional current direction) modulates the conductivity of the base region, allowing a much larger current to flow from emitter to collector. The current gain (hFE) is the ratio of collector current to base current, ranging from 125 to 630 for the B grade. Because both transistors share the same thermal environment and are fabricated simultaneously, their VBE and hFE are closely matched, enabling accurate current mirror operation.

Pin Nombre Tipo Función
1 E1 Potencia Transistor 1 emitter
2 B1 Entrada Transistor 1 base
3 C2 Potencia Transistor 2 collector
4 E2 Potencia Transistor 2 emitter
5 B2 Entrada Transistor 2 base
6 C1 Potencia Transistor 1 collector
  • Precision current mirror bias circuits for op-amp stages
  • Differential amplifier input pair with matched VBE
  • Temperature-compensated reference voltage networks
  • General-purpose small-signal amplification and switching
  • Signal routing and analog multiplexing in portable devices
Fabricante Número de pieza Paquete Notas
Nexperia BC856BVS SOT753 6-pin, same function, different pinout
Nexperia BC856BS,115 SOT363 Same device, tape and reel
onsemi BC856BWT1G SOT363 Single PNP, same series
Infineon BC856BWE6327 SOT323 Single PNP, similar specs
Diodos Inc BC856BS-7-F SOT363 Dual PNP, equivalent
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