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AON5820

30V P-Ch MOSFET, 21mOhm, -15A, DFN 3x3-8L, Load Switch

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Pieza del fabricante：

AON5820

Paquete：

DFN 3x3-8L (3.0 x 3.0 x 0.75 mm, exposed pad)

Marca：
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Descripción

Productos

The AON5820 from Alpha and Omega Semiconductor is a 30 V, P-channel enhancement mode MOSFET with 21 mOhm RDS(on) at VGS=-10V in a DFN 3×3-8L package, optimized for load switching and battery management.

Especificaciones

Tipo P-Channel Enhancement Mode MOSFET
VDS -30 V
RDS(on) 21 mOhm (max) @ VGS=-10V
ID (Drain Current) -15 A @ TC=25C
VGS(th) -1.0 V to -2.5 V
Total Gate Charge (Qg) 28 nC (typical)
Power Dissipation 29 W @ TC=25C
Paquete DFN 3×3-8L
Temperatura de funcionamiento -55C to 150C

Características

  • 21 mOhm low RDS(on) for minimal conduction loss
  • 30 V drain-source voltage rating
  • Compact DFN 3×3-8L footprint
  • Low gate charge (28 nC) for fast switching
  • 100% UIS tested for ruggedness

Aplicaciones

  • Battery disconnect and load switches
  • Power management and battery protection
  • DC-DC converter high-side P-FET
  • Portable device power path control

The AON5820 from Alpha and Omega Semiconductor is a 30 V P-channel enhancement mode MOSFET in a compact DFN 3×3-8L package. With 21 mOhm maximum RDS(on) at VGS=-10V, the device minimizes conduction losses in high-side load switching applications. The -15 A drain current rating and 29 W power dissipation capability support demanding battery management and power path control functions. The 28 nC total gate charge enables efficient switching at moderate frequencies. The DFN 3×3-8L package with exposed pad provides excellent thermal performance in a minimal footprint.

The AON5820 is a P-channel enhancement mode MOSFET. When the gate-source voltage (VGS) is more negative than the threshold voltage (VGS(th), -1.0V to -2.5V), an inversion layer forms in the P-body region under the gate oxide, creating a conduction channel between the source and drain. Current flows from source to drain when the drain is at a lower potential than the source. The RDS(on) of 21 mOhm at VGS=-10V is achieved through advanced trench technology with high cell density. In the off-state (VGS close to 0V), no inversion layer forms and the device blocks current up to the 30 V VDS rating. The body diode (inherent P-N junction between body and drain) conducts when the drain is forward-biased relative to the source, providing a natural freewheeling path.

Pin Nombre Tipo Función
1 Fuente Potencia Source terminal
2 Puerta Entrada Gate drive input
3 Fuente Potencia Source terminal
4 Drenaje Potencia Drain terminal
5 Drenaje Potencia Drain terminal
6 Drenaje Potencia Drain terminal
7 Drenaje Potencia Drain terminal
8 Fuente Potencia Source terminal
Tampón Drenaje Potencia Exposed thermal pad (drain)
  • Laptop and tablet battery disconnect load switch
  • Smartphone power management high-side switch
  • Battery protection circuit power path control
  • DC-DC converter synchronous P-channel high-side
  • USB power delivery port power routing switch
Fabricante Número de pieza Paquete Notas
AOS AON7403 DFN 3×3-8L Older generation, higher RDS(on)
Infineon BSB008NE2LX3 PQFN-8 30V P-ch, 9mOhm, higher current
Vishay SI4465DY-T1-GE3 SOIC-8 30V P-ch, 22mOhm, leaded
onsemi NTR4101PT1G SOT-23-6 30V P-ch, 58mOhm, smaller
Texas Instruments CSD25213W SON-8 30V P-ch, 15mOhm, power block
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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