产品概览
The SIRA18ADP-T1-GE3 from Vishay is a 30 V, N-channel enhancement mode TrenchFET power MOSFET with 9.3 mOhm RDS(on) at VGS=4.5V in a PowerPAK 1212-8S package, optimized for low-voltage power switching.
主要规格
| 类型 | N-Channel TrenchFET Power MOSFET |
| VDS | 30 V |
| RDS(on) @ VGS=4.5V | 9.3 mOhm (max) |
| RDS(on) @ VGS=2.5V | 14.5 mOhm (max) |
| 身份证 | 28 A @ TC=25C |
| VGS(th) | 0.65 V to 1.45 V |
| Total Gate Charge (Qg) | 16 nC (typical) |
| 功率耗散 | 34 W @ TC=25C |
| 包装 | PowerPAK 1212-8S (3.3 x 3.3 mm) |
| 工作温度 | -55C to 150C |
特点
- Ultra-low 9.3 mOhm RDS(on) at VGS=4.5V
- Logic-level gate drive compatible (4.5V)
- Low 16 nC total gate charge
- 30 V rating for battery-powered systems
- PowerPAK 1212-8S with excellent thermal resistance
应用
- Battery-powered load switches and disconnects
- DC-DC converter synchronous rectifier
- Motor drive and H-bridge low-side
- Hot-swap and inrush current limiting