产品概览
The SI2303CDS-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET MOSFET in a SOT-23-3 package. With 30V drain-source voltage, 2.7A continuous drain current, and 190 mΩ max on-resistance at VGS=-10V, it is the industry-standard P-channel MOSFET for high-side load switching, battery disconnect, and power routing in portable electronics and computing devices.
主要规格
| 类型 | P-Channel Enhancement MOSFET (TrenchFET) |
| VDS | -30V |
| VGS | ±20V |
| ID (Continuous) | -2.7A @ 25°C |
| RDS(ON) | 0.190Ω max @ VGS=-10V |
| VGS(th) | -0.45V to -1.0V typical |
| Gate Charge (Qg) | 8 nC @ VDS=-10V |
| Input Capacitance (Ciss) | 155 pF @ VDS=-15V |
| 功率耗散 | 1W (TA=25°C), 2.3W (TC=25°C) |
| 工作温度 | -55°C to +150°C (junction) |
| 包装 | SOT-23-3 (TO-236) |
特点
- P-channel TrenchFET technology for low RDS(ON)
- 190 mΩ max RDS(ON) at -10V gate drive
- Low threshold: -0.45V typical for logic-level drive
- 2.7A continuous drain current
- Low gate charge: 8 nC for fast switching
- Industry-standard SOT-23-3 pinout
- AEC-Q101 qualified version available
应用
- High-side load switch for battery-powered devices
- Battery disconnect and power routing
- Load switch with P-channel for USB and peripheral power
- Motor H-bridge P-channel element
- Power management in notebook and tablet computers