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CSD87351Q5D

40V Half-Bridge MOSFET Power Stage, 3.5/2.6mOhm, 12A, SON-5

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Pieza del fabricante：

CSD87351Q5D

Paquete：

SON-5 (5.0 x 6.0 x 0.9 mm, PowerPAD)

Marca：
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Descripción

Productos

The CSD87351Q5D from Texas Instruments is a 40 V N-channel MOSFET half-bridge power stage in a 5-pin SON package, optimized for high-frequency synchronous buck converters with 3.5 mOhm high-side and 2.6 mOhm low-side RDS(on).

Especificaciones

Tipo N-Channel MOSFET Half-Bridge Power Stage
VDS 40 V
High-Side RDS(on) 3.5 mOhm (max)
Low-Side RDS(on) 2.6 mOhm (max)
Continuous Current 12 A
Switching Frequency Up to 1.5 MHz
Paquete SON-5 (5 x 6 mm, PowerPAD)
Temperatura de funcionamiento -40C to 150C

Características

  • Co-packaged half-bridge for minimum parasitic inductance
  • Ultra-low RDS(on) for high efficiency
  • Monolithically integrated Schottky body diode
  • Optimized for high-frequency synchronous buck converters
  • 5-pin SON package with PowerPAD thermal enhancement

Aplicaciones

  • Point-of-load buck converters for servers and telecom
  • Notebook and desktop VRM power stages
  • High-frequency DC-DC converter output stages
  • Embedded computing core voltage regulators

The CSD87351Q5D from Texas Instruments is a 40 V N-channel MOSFET half-bridge power stage optimized for high-frequency synchronous buck converters. By co-packaging the high-side and low-side MOSFETs in a single SON-5 package, parasitic inductance between the two switches is minimized, reducing ringing and switching losses. The high-side MOSFET features 3.5 mOhm max RDS(on) and the low-side features 2.6 mOhm max RDS(on), enabling high efficiency at output currents up to 12 A. The integrated Schottky body diode in the low-side MOSFET reduces reverse recovery losses. The PowerPAD exposed pad provides excellent thermal performance for compact designs.

The CSD87351Q5D integrates two N-channel MOSFETs in a half-bridge configuration. The high-side MOSFET (control FET) connects the input voltage to the output inductor (SW node), and the low-side MOSFET (synchronous FET) connects the SW node to ground. During the on-time, the high-side MOSFET conducts, delivering energy to the inductor and load. During the off-time, the high-side turns off and the low-side MOSFET turns on, allowing the inductor current to freewheel through the low-side switch. The co-packaged design minimizes the parasitic loop inductance between the high-side drain, the SW node, and the low-side source, which reduces voltage overshoot and high-frequency ringing at the switch node. The integrated Schottky diode across the low-side MOSFET provides a low-forward-voltage path during the dead-time when both MOSFETs are off.

Pin Nombre Tipo Función
1 VIN Potencia Input supply (connect to high-side drain)
2 SW Salida Switch node (high-side source, low-side drain)
3 GND Suelo Power ground (low-side source)
4 HSG Entrada High-side gate drive
5 LSG Entrada Low-side gate drive
Tampón GND Suelo Exposed thermal pad (connect to GND)
  • Server VRM buck converter output stage at 500kHz-1.5MHz
  • Desktop CPU core voltage regulator power block
  • Notebook DC-DC converter compact power stage
  • Telecom POL converter high-efficiency output stage
  • Embedded computing 12V-to-core voltage regulation
Fabricante Número de pieza Paquete Notas
Texas Instruments CSD87353Q5D SON-5 Higher current, 30V variant
Infineon BSZ0908ND PG-TDSON-8 Half-bridge, 30V, 8A
onsemi NTMFS4C05N PQFN-5×6 Half-bridge, 30V, 12A
Vishay SiC773CD PQFN-5×6 Half-bridge, 40V, 15A
Renesas RJK0255DPB PQFN-5×6 Half-bridge, 30V, 10A
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