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FAN7392N


600V 高/低压侧栅极驱动器,3A/3A,3.3V 逻辑,UVLO,关断,PDIP-14,最近出货

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制造商零件:

FAN7392N

包装:

PDIP-14(19.3 x 6.35 x 4.57 毫米,2.54 毫米间距,通孔)

品牌:
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说明

Onsemi(前身为 Fairchild)的 FAN7392N 是一款单片式高压侧和低压侧栅极驱动 IC,采用 14 引脚 PDIP 封装,能够驱动工作电压高达 +600V 的 MOSFET 和 IGBT。它具有 3A/3A 源/汇输出电流、3.3V 逻辑兼容输入、独立 VDD 逻辑电源(3.3V 至 20V)、VCC 和 VBS 欠压锁定、逐周期边缘触发关断、双通道匹配传播延迟和共模 dv/dt 噪声消除。功耗为 1.6W。工作温度 -40C 至 +125C。注:该产品处于最后发货状态。.

Onsemi(前身为 Fairchild Semiconductor)的 FAN7392N 是一款采用 14 引脚 PDIP 通孔封装的单片式高压侧和低压侧栅极驱动 IC。它可以驱动工作电压高达 +600V 的 MOSFET 和 IGBT,适用于半桥和全桥逆变器应用。注:该产品在 onsemi 处于最后出货状态,这意味着它已接近报废期,不应设计到新产品中。.

FAN7392 提供独立的高压侧和低压侧栅极驱动输出(HO 和 LO),每个输出都能提供 3A 源电流和 3A 灌电流。缓冲输出级采用全 NMOS 晶体管,具有高脉冲电流驱动能力,并在开关转换期间将交叉传导降至最低。.

该高压侧驱动器采用自举浮动电源 (VB-VS),允许工作电压高达 +600V。 Onsemi 的高压工艺和共模噪声消除技术可在高 dv/dt 噪声环境下稳定工作。先进的电平转换电路可在 VBS = 15V 时提供低至 VS = -9.8V(典型值)的高压侧栅极驱动器工作,这对于会出现负 VS 瞬变的电机驱动应用至关重要。.

逻辑输入(HIN、LIN、SD)与标准 CMOS 或 LSTTL 输出兼容,逻辑电压低至 3.3V。独立的 VDD 逻辑电源引脚(3.3V 至 20V)允许与 3.3V 微控制器直接连接,无需电平转换。SD(关断)引脚为两个通道提供逐周期边缘触发关断功能,适用于过流保护。.

当 VCC(低压侧电源)和 VBS(高压侧电源)低于规定的阈值电压时,欠压锁定(UVLO)电路可防止误动作,确保 MOSFET/IGBT 不会在上电期间进入线性工作状态。.

两个通道的传播延迟相匹配(典型值为 130 ns 接通,150 ns 关断),可在桥式配置中实现精确的互补开关。输出与输入信号同相(HIN=高,HO=高)。.

PDIP-14 封装在 25C 环境温度下的功率耗散为 1.6W,热阻为 75C/W。对于表面贴装应用,还提供 FAN7392MX(SOIC-16W)变体,但也处于最后出货状态。.

对于新设计,onsemi 建议使用 FAN7390 或 NCP51530 作为替代器件。.

**自举高压侧驱动器:** 高压侧驱动器由连接在 VB 和 VS 之间的自举电容器供电。 当低压侧 MOSFET 打开时,VS 接近接地,自举电容器通过自举二极管从 VCC 充电。当高压侧 MOSFET 接通时,VS 上升到总线电压,自举电容为高压侧驱动器提供浮动电源。这样就不再需要隔离电源。.

**电平转换:** 高压侧驱动器以 VS(开关节点)为基准,在高 dv/dt 时在接地和总线电压之间摆动。电平转换电路将接地参考逻辑信号转换为浮动高压侧域。共模 dv/dt 噪声消除电路可防止在这些快速转换期间发生误触发。.

**逐周期关机:** SD(关机)引脚具有边沿触发关机功能。在 SD 上检测到上升沿时,HO 和 LO 都会在开关周期的剩余时间内被强制置低。在下一个 HIN/LIN 转换时,输出恢复正常工作。这提供了快速过流保护,而无需锁定驱动器。.

**UVLO 保护:** VCC 和 VBS 均由欠压锁定电路监控。如果 VCC 低于 UVLO 门限(典型值约为 9.2V),低压侧输出将被禁用。如果 VBS 低于其 UVLO 门限(典型值约为 8.6V),高压侧输出将被禁用。这可防止 MOSFET 在栅极电压不足的情况下被驱动,从而导致过大的传导损耗和潜在的器件故障。.

针脚 名称 类型 说明
1 LO O 低端栅极驱动输出;连接低端 MOSFET/IGBT 栅极;3A 源/3A 灌;与 LIN 同相;由 VCC 电源驱动
2 COM G 低端返回;连接至 MOSFET 源(接地);驱动器的星点接地;与逻辑接地分开
3 VCC P 低压侧电源;10-20V;为低压侧驱动器和逻辑供电;用 0.1uF + 1uF 陶瓷去耦至 COM;自举二极管阳极连接至此处
5 VS 输入/输出 高压侧浮动电源返回;连接至半桥开关节点(高压侧源极和低压侧漏极的交界处);0 至总线电压摆动;必须处理高 dv/dt
6 VB P 高压侧浮动电源;自举电容器正极;在此处连接自举二极管阴极和电容器;VBS = VB-VS = 10-20V
7 HO O 高压侧栅极驱动输出;连接高压侧 MOSFET/IGBT 栅极;3A 源/3A 灌;与 HIN 同相;由自举式电源驱动
9 VDD P 逻辑电源;3.3V 至 20V;为输入逻辑供电;允许 3.3V MCU 直接接口;用 0.1uF 与 VSS 去耦
10 HIN I 高压侧逻辑输入;兼容 CMOS/LSTTL;HIGH = HO HIGH;LOW = HO LOW;通过 VDD 电源兼容 3.3V 逻辑电压
11 SD I 关机输入;边沿触发;上升沿在剩余周期内关闭两个输出;连接至过流比较器输出;高电平有效
12 I 低端逻辑输入;兼容 CMOS/LSTTL;HIGH = LO HIGH;LOW = LO LOW;通过 VDD 电源兼容 3.3V 逻辑电压
13 VSS G 逻辑接地;连接至 PCB 接地;HIN、LIN、SD 输入的基准;由于接地反弹,可能与 COM 不同
应用 说明
半桥 DC-DC 转换器 驱动同步降压/升压转换器中的高压侧和低压侧 MOSFET;为低 RDS(on) MOSFET 提供 3A 栅极驱动;匹配的传播延迟可防止击穿;自启动操作可消除隔离电源;UVLO 可防止启动问题
电机驱动变频器 驱动三相电机逆变器中的 IGBT 模块;额定电压 600V,适用于 400V 总线系统;VS 负瞬态容差 (-9.8V) 可处理 IGBT 开关瞬态;SD 引脚可通过电流传感器提供过流保护
服务器/电信电源 驱动全桥或半桥电信整流器中的 MOSFET;带数字控制器的 3.3V 逻辑接口;集成屏蔽带来的高 dv/dt 抗噪能力;通孔 PDIP,适合原型开发
模型 制造商 兼容性 主要区别
NCP51530ADR2G onsemi 建议更换 600V 半桥驱动器;4.5A/4.5A;SOIC-16W;主动状态;更高的驱动电流;更宽的 VCC 范围;用于新设计
IR2110PBF 英飞凌 行业标准 600V 半桥驱动器;2A/2A;PDIP-14;相同的引脚输出概念;不同的引脚输出;行业主力;广泛可用;较低的驱动电流
FAN7390AN onsemi 同一家庭 600V 半桥驱动器;2A/2A;PDIP-14;较低驱动电流;激活状态;当 2A 驱动器足够时使用
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