FAN7392N


600V high/low-side gate driver, 3A/3A, 3.3V logic, UVLO, shutdown, PDIP-14, Last Shipments

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Manufacturer Part:

FAN7392N

Package:

PDIP-14 (19.3 x 6.35 x 4.57 mm, 2.54mm pitch, through-hole)

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Description

The FAN7392N from onsemi (formerly Fairchild) is a monolithic high- and low-side gate drive IC in a 14-pin PDIP package capable of driving MOSFETs and IGBTs operating up to +600V. It features 3A/3A source/sink output current, 3.3V logic-compatible inputs, separate VDD logic supply (3.3V to 20V), under-voltage lockout for VCC and VBS, cycle-by-cycle edge-triggered shutdown, matched propagation delay for both channels, and common-mode dv/dt noise cancellation. Power dissipation 1.6W. Operating temperature -40C to +125C. Note: This product is in Last Shipments status.

The FAN7392N from onsemi (formerly Fairchild Semiconductor) is a monolithic high- and low-side gate drive IC in a 14-pin PDIP through-hole package. It can drive MOSFETs and IGBTs that operate up to +600V, making it suitable for half-bridge and full-bridge inverter applications. Note: This product is in Last Shipments status at onsemi, meaning it is approaching end-of-life and should not be designed into new products.

The FAN7392 provides independent high-side and low-side gate drive outputs (HO and LO), each capable of 3A source and 3A sink current. The buffered output stage uses all-NMOS transistors for high pulse current driving capability and minimum cross-conduction during switching transitions.

The high-side driver uses a bootstrap floating supply (VB-VS) that allows operation up to +600V. onsemi’s high-voltage process and common-mode noise canceling techniques provide stable operation under high dv/dt noise circumstances. The advanced level-shift circuit offers high-side gate driver operation down to VS = -9.8V (typical) for VBS = 15V, critical for motor drive applications where negative VS transients occur.

Logic inputs (HIN, LIN, SD) are compatible with standard CMOS or LSTTL output, down to 3.3V logic. A separate VDD logic supply pin (3.3V to 20V) allows direct interfacing with 3.3V microcontrollers without level translation. The SD (shutdown) pin provides cycle-by-cycle edge-triggered shutdown for both channels, useful for overcurrent protection.

The under-voltage lockout (UVLO) circuit prevents malfunction when VCC (low-side supply) and VBS (high-side supply) are below the specified threshold voltage, ensuring the MOSFETs/IGBTs are not driven into linear operation during power-up.

The propagation delay is matched for both channels (130 ns turn-on, 150 ns turn-off typical), enabling precise complementary switching in bridge configurations. The outputs are in-phase with the input signals (HIN=HIGH produces HO=HIGH).

The PDIP-14 package provides 1.6W power dissipation at 25C ambient with 75C/W thermal resistance. For surface-mount applications, the FAN7392MX (SOIC-16W) variant is also available but also in Last Shipments status.

For new designs, onsemi recommends the FAN7390 or NCP51530 as replacement devices.

**Bootstrap High-Side Drive:** The high-side driver is powered by a bootstrap capacitor connected between VB and VS. When the low-side MOSFET is on, VS is near ground, and the bootstrap capacitor charges through the bootstrap diode from VCC. When the high-side MOSFET turns on, VS rises to the bus voltage, and the bootstrap capacitor provides the floating supply for the high-side driver. This eliminates the need for an isolated power supply.

**Level Shifting:** The high-side driver is referenced to VS (the switch node), which swings between ground and the bus voltage at high dv/dt. The level-shift circuit translates the ground-referenced logic signals to the floating high-side domain. The common-mode dv/dt noise cancellation circuit prevents false triggering during these fast transitions.

**Cycle-by-Cycle Shutdown:** The SD (shutdown) pin provides an edge-triggered shutdown function. When a rising edge is detected on SD, both HO and LO are forced LOW for the remainder of the switching cycle. The outputs resume normal operation on the next HIN/LIN transition. This provides fast overcurrent protection without latching off the driver.

**UVLO Protection:** Both VCC and VBS are monitored by under-voltage lockout circuits. If VCC drops below the UVLO threshold (approximately 9.2V typical), the low-side output is disabled. If VBS drops below its UVLO threshold (approximately 8.6V typical), the high-side output is disabled. This prevents the MOSFETs from being driven with insufficient gate voltage, which would cause excessive conduction losses and potential device failure.

Pin Name Type Description
1 LO O Low-side gate drive output; connects to low-side MOSFET/IGBT gate; 3A source/3A sink; in-phase with LIN; driven from VCC supply
2 COM G Low-side return; connects to MOSFET source (ground); star-point ground for driver; separate from logic ground
3 VCC P Low-side supply; 10-20V; powers low-side driver and logic; decouple with 0.1uF + 1uF ceramic to COM; bootstrap diode anode connects here
5 VS I/O High-side floating supply return; connects to half-bridge switch node (junction of high-side source and low-side drain); swings 0 to bus voltage; must handle high dv/dt
6 VB P High-side floating supply; bootstrap capacitor positive terminal; connect bootstrap diode cathode and capacitor here; VBS = VB-VS = 10-20V
7 HO O High-side gate drive output; connects to high-side MOSFET/IGBT gate; 3A source/3A sink; in-phase with HIN; driven from bootstrap supply
9 VDD P Logic supply; 3.3V to 20V; powers input logic; allows direct 3.3V MCU interface; decouple with 0.1uF to VSS
10 HIN I High-side logic input; CMOS/LSTTL compatible; HIGH = HO HIGH; LOW = HO LOW; 3.3V logic compatible via VDD supply
11 SD I Shutdown input; edge-triggered; rising edge shuts down both outputs for remainder of cycle; connect to overcurrent comparator output; active-HIGH
12 LIN I Low-side logic input; CMOS/LSTTL compatible; HIGH = LO HIGH; LOW = LO LOW; 3.3V logic compatible via VDD supply
13 VSS G Logic ground; connect to PCB ground; reference for HIN, LIN, SD inputs; may differ from COM due to ground bounce
Application Description
Half-Bridge DC-DC Converter Drive high-side and low-side MOSFETs in synchronous buck/boost converters; 3A gate drive for low-RDS(on) MOSFETs; matched propagation delays prevent shoot-through; bootstrap operation eliminates isolated supply; UVLO prevents startup issues
Motor Drive Inverter Drive IGBT modules in 3-phase motor inverters; 600V rating for 400V bus systems; VS negative transient tolerance (-9.8V) handles IGBT switching transients; SD pin for overcurrent protection from current sensor
Server/Telecom Power Supply Drive MOSFETs in full-bridge or half-bridge telecom rectifiers; 3.3V logic interface with digital controller; high dv/dt noise immunity from integrated shielding; through-hole PDIP for prototyping
Model Manufacturer Compatibility Key Difference
NCP51530ADR2G onsemi Recommended Replacement 600V half-bridge driver; 4.5A/4.5A; SOIC-16W; Active status; higher drive current; wider VCC range; use for new designs
IR2110PBF Infineon Industry Standard 600V half-bridge driver; 2A/2A; PDIP-14; same pinout concept; different pinout; industry workhorse; widely available; lower drive current
FAN7390AN onsemi Same Family 600V half-bridge driver; 2A/2A; PDIP-14; lower drive current; Active status; use when 2A drive is sufficient
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