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MMBT3906-7-F

PNP 40V 200mA gen-purpose transistor, 250MHz fT, SOT-23-3, AEC-Q101, hFE 100-300

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Manufacturer Part：

MMBT3906-7-F

Package：

SOT-23-3 (2.90 x 1.30 x 0.98 mm)

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Description

Product Overview

The MMBT3906-7-F from Diodes Incorporated is a 40V, 200mA PNP general-purpose switching transistor in a SOT-23-3 package. AEC-Q101 qualified with complementary NPN MMBT3904, it features 250MHz transition frequency and low saturation voltage for switching and amplification.

Key Specifications

Polarity PNP
VCEO -40 V
VCBO -40 V
VEBO -6.0 V
IC (continuous) -200 mA
VCE(sat) max -0.40 V @ IC=50mA, IB=5mA
hFE (at 10mA) 100-300
fT 250 MHz
Power Dissipation 310 mW
ESD Rating 4000V HBM
Package SOT-23-3
Operating Temperature -55°C to +150°C
Qualification AEC-Q101

Features

  • 40V PNP general-purpose transistor with AEC-Q101 automotive qualification
  • 250MHz transition frequency suitable for high-speed switching
  • Low VCE(sat) of 0.25V at 10mA for efficient switching
  • Complementary NPN type MMBT3904 for push-pull configurations
  • 4000V HBM ESD rating for robust handling

Applications

  • General-purpose switching and amplification in automotive and industrial
  • Push-pull and totem-pole output stages with MMBT3904
  • Signal inversion and level shifting in SOT-23 footprint

The MMBT3906-7-F from Diodes Incorporated is a 40V, 200mA PNP general-purpose switching transistor in a SOT-23-3 surface-mount package. The device features epitaxial planar die construction and is ideally suited for medium power amplification and switching. AEC-Q101 qualified, it is suitable for automotive applications. The complementary NPN type is MMBT3904, enabling push-pull and totem-pole output stage designs. The 250MHz transition frequency supports high-speed switching applications. The device has a 4000V HBM ESD rating for robust handling during assembly. The -7-F suffix indicates tape and reel packaging with 3000 units per reel. Halogen and antimony free, RoHS compliant.

The MMBT3906-7-F is a PNP bipolar junction transistor (BJT). (1) Forward Active: When the base-emitter junction is forward-biased (VEB > 0.6V) and the collector-base junction is reverse-biased, holes are injected from the emitter into the base. Most holes diffuse across the thin base and are collected by the collector, producing collector current IC that is a multiple (hFE) of the base current IB. (2) Saturation: When both junctions are forward-biased, VCE drops to VCE(sat), typically -0.25V at IC=10mA. The transistor acts as a closed switch. (3) Cutoff: When IB=0, only small leakage current flows and the transistor acts as an open switch. (4) Complementary Pair: Used with NPN MMBT3904, the pair can implement push-pull amplifiers where one transistor sources current and the other sinks it.

Pin Name Function
1 Base Base (control input)
2 Emitter Emitter
3 Collector Collector
  • PNP switching and signal inversion in automotive control modules
  • Push-pull output stages with MMBT3904 NPN complement
  • General-purpose amplification and level shifting at 40V in SOT-23
Manufacturer Part Number Package Notes
Nexperia MMBT3906,215 SOT-23-3 AEC-Q101, similar
onsemi MMBT3906LT1G SOT-23-3 AEC-Q101, similar
Diodes Inc MMBT3906-13 SOT-23-3 Non-automotive version
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