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BC847BT-7-F

NPN BJT, 45V, 100mA, hFE 200-450, SOT-523, high gain

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Manufacturer Part：

BC847BT-7-F

Package：

SOT-523 / SC-75 (1.6 x 0.8 mm)

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Description

Product Overview

The BC847BT-7-F from Diodes Incorporated is an NPN general-purpose bipolar junction transistor rated at 45V and 100mA in a SOT-523 (SC-75) package. With hFE of 200-450 (B group), it provides high gain for signal amplification and switching in ultra-compact footprint.

Key Specifications

Type NPN
VCEO 45 V
IC (max) 100 mA
VCE(sat) 0.25 V @ 10mA
hFE (B group) 200 – 450
fT 100 MHz
Power Dissipation 200 mW
Package SOT-523 (SC-75)
Operating Temperature -55°C to +150°C (Tj)

Features

  • Ultra-compact SOT-523 package for high-density PCB designs
  • High hFE of 200-450 (B group) for sensitive signal amplification
  • Low VCE(sat) of 0.25V for efficient switching
  • Complementary to BC857 PNP transistor
  • Lead-free and RoHS compliant

Applications

  • Small-signal amplification in portable electronics
  • Logic level translation and interface circuits
  • Sensor signal conditioning
  • LED indicator driver circuits
  • Low-power switching applications

The BC847BT-7-F from Diodes Incorporated is a high-gain NPN general-purpose bipolar junction transistor in an ultra-compact SOT-523 (SC-75) surface-mount package. The B gain group provides hFE of 200-450, making it suitable for sensitive signal amplification and high-gain switching applications. Rated at 45V VCEO and 100mA continuous collector current, it offers low saturation voltage of 0.25V at 10mA for efficient switching operation. The tiny 1.6 x 0.8mm SOT-523 package enables high component density in portable and space-constrained electronics.

The BC847BT-7-F operates as a standard NPN bipolar junction transistor. (1) Current flows from collector to emitter when the base-emitter junction is forward biased at approximately 0.7V. The base current is amplified by the current gain (hFE = 200-450) to control a proportionally larger collector current. (2) The high hFE enables the transistor to be driven from high-impedance signal sources, making it ideal for sensor interfaces and logic-level signal amplification. (3) In switching applications, the low VCE(sat) of 0.25V minimizes power dissipation during the on-state, while the 100MHz transition frequency supports moderate-speed switching.

Pin Name Function
1 Base Control input
2 Emitter Current output
3 Collector Current input
  • Small-signal amplification in battery-powered portable electronics
  • Logic-level signal buffering and translation between voltage domains
  • Sensor interface signal conditioning with high input impedance
  • LED indicator driver with 100mA current capability
  • Low-power switching in handheld and wearable devices
Model Manufacturer Key Difference
BC847BLT-7-F Diodes Inc A group, hFE 110-220
BC847CCT-7-F Diodes Inc C group, hFE 420-800
BC847B-7-F Diodes Inc SOT-23 package version
MMBT3904 onsemi NPN, 200mA, 40V, SOT-23
BC850B Nexperia NPN, 45V, 100mA, SOT-23
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