Product Overview
IPD30N10S3L34ATMA1 from Infineon is an OptiMOS-T N-channel MOSFET, 100V, 30A, 25.8mOhm RDS(on) at 10V. AEC-Q101 automotive qualified. 175C max junction. DPAK package. Tape-and-reel.
Working Principle
Enhancement-mode N-channel MOSFET. VGS > VGS(th) creates conduction channel. Low RDS(on) of 25.8mOhm minimizes conduction loss. AEC-Q101 qualified for automotive reliability. 175C max junction for harsh environments.
Pin Description
| Pin | Name | Function |
|---|---|---|
| 1 | Gate | Gate drive |
| 2 | Drain | Drain (tab) |
| 3 | Source | Source |
Applications
- Automotive motor drive
- DC-DC converter power stage
- Load switch and battery disconnect
Alternative Models
| Manufacturer | Part Number | Notes |
|---|---|---|
| Infineon | IPD30N10S3L34ATMA2 | Newer preferred |
| Infineon | IPD50N10S3L-34 | 50A version |