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IPD30N10S3L34ATMA1

N-ch MOSFET, 100V, 30A, 25.8mOhm, DPAK, AEC-Q101

14991

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Pieza del fabricante：

IPD30N10S3L34ATMA1

Paquete：

DPAK (TO-252-3, 6.5 x 6.2 x 2.3mm)

Marca：
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Descripción

Productos

IPD30N10S3L34ATMA1 from Infineon is an OptiMOS-T N-channel MOSFET, 100V, 30A, 25.8mOhm RDS(on) at 10V. AEC-Q101 automotive qualified. 175C max junction. DPAK package. Tape-and-reel.

Principio de funcionamiento

Enhancement-mode N-channel MOSFET. VGS > VGS(th) creates conduction channel. Low RDS(on) of 25.8mOhm minimizes conduction loss. AEC-Q101 qualified for automotive reliability. 175C max junction for harsh environments.

Pin Description

Pin Nombre Función
1 Puerta Gate drive
2 Drenaje Drain (tab)
3 Fuente Fuente

Aplicaciones

  • Automotive motor drive
  • DC-DC converter power stage
  • Load switch and battery disconnect

Alternative Models

Fabricante Número de pieza Notas
Infineon IPD30N10S3L34ATMA2 Newer preferred
Infineon IPD50N10S3L-34 50A version

IPD30N10S3L34ATMA1 from Infineon is an OptiMOS-T N-channel MOSFET, 100V, 30A, 25.8mOhm RDS(on) at 10V. AEC-Q101 automotive qualified. 175C max junction. DPAK package. Tape-and-reel.

Enhancement-mode N-channel MOSFET. VGS > VGS(th) creates conduction channel. Low RDS(on) of 25.8mOhm minimizes conduction loss. AEC-Q101 qualified for automotive reliability. 175C max junction for harsh environments.

Pin Nombre Función
1 Puerta Gate drive
2 Drenaje Drain (tab)
3 Fuente Fuente
  • Automotive motor drive
  • DC-DC converter power stage
  • Load switch and battery disconnect
Fabricante Número de pieza Notas
Infineon IPD30N10S3L34ATMA2 Newer preferred
Infineon IPD50N10S3L-34 50A version
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Contact Information

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Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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